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J105 - Fairchild Semiconductor - N-Channel Switch

Номер произв J105
Описание N-Channel Switch
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 
предварительный просмотр
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J105 Даташит, Описание, Даташиты
Discrete POWER & Signal
Technologies
J105
J106
J107
G
SD
TO-92
JFTJ105
G
SOT-223
G
S
D
N-Channel Switch
This device is designed for analog or digital switching applications where
very low On Resistance is mandatory. Sourced from Process 59.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VDG
VGS
IGF
TJ, Tstg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
25
- 25
10
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
J105 / J106 / J107
350
2.8
125
357
Units
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W
©1997 Fairchild Semiconductor Corporation
--------------------------------------------

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J105 Даташит, Описание, Даташиты
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
N-Channel Switch
(continued)
Min Max Units
OFF CHARACTERISTICS
V(BR)GSS
Gate-Source Breakdown Voltage
IGSS Gate Reverse Current
VGS(off)
Gate-Source Cutoff Voltage
IG = - 10 µA, VDS = 0
VGS = - 15 V, VDS = 0
VGS = - 15 V, VDS = 0, TA = 100°C
VDS = 15 V, ID = 10 nA
J105
J106
J107
- 25
- 4.5
- 2.0
- 0.5
- 3.0
- 200
- 10
- 6.0
- 4.5
V
nA
nA
V
V
V
ON CHARACTERISTICS
IDSS Zero-Gate Voltage Drain Current*
rDS(on)
Drain-Source On Resistance
VDS = 15 V, IGS = 0
VDS 0.1 V, VGS = 0
J105 500
mA
J106 200
mA
J107 100
mA
J105
3.0
J106
J107
6.0
8.0
SMALL SIGNAL CHARACTERISTICS
Cdg(on)
Csg(on)
Cdg(off)
Csg(off)
Drain Gate & Source Gate On
Capacitance
Drain-Gate Off Capacitance
Source-Gate Off Capacitance
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
VDS = 0, VGS = 10 V, f = 1.0 MHz
VDS = 0, VGS = 10 V, f = 1.0 MHz
VDS = 0, VGS = 10 V, f = 1.0 MHz
160 pF
35 pF
35 pF
Typical Characteristics
Common Drain-Source
Characteristics
200
V =0 V
GS
-1V
150
-2V
100
-3V
50
0
0
-4V
T = + 25 C0
A
-5V
TYP V
= -5V
GS(OFF)
0.5 1 1.5
VDS - DRAIN-SOURCE VOLTAGE(V)
2
Common Drain-Source
Characteristics
50
V =0V
GS
40
- 0.1V
0
T = + 25 C
A
TYP V
= -0.7V
GS(OFF)
30
20
10
0
0
- 0.2V
- 0.3V
-0.4V
- 0.5V
12 34
V - DRAIN-SOURCE VOLTAGE(V)
DS
5
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J105 Даташит, Описание, Даташиты
Typical Characteristics (continued)
N-Channel Switch
(continued)
Parameter Interactions
200
100
50
r DS @ VDS=100MV, VGS = 0
V @ VDS = 5.0V, ID =3nA
GS(OFF)
I DSS
2,000
1,000
500
20
10
5r
DS
2
1
0.1 0.2 0.3 0.5
1
23 5
V GS - GATE CUT OFF VOLTAGE (V)
200
100
50
20
10
10
Capacitance vs Voltage
f=0.1-1.0MHz
C is ( V DS = 5 V )
20
C rs ( VDS = 0 V )
10
5
1
0 -5 -10 -15 -20
V GS - GATE-SOURCE VOLTAGE (V)
Normalized Drain Resistance
vs Bias Voltage
20 V GS(OFF) @5V, 10uA
rDS
10 r = ---------------
DSb V GS
5
1 - ----------
VGS(OFF)
1
0.5
0
0.2 0.4 0.6 0.8
1
V / V -- NORMALIZED GATE TO SOURCE VOLTAGE (V)
GS GS(OFF)
On Resistance vs
Drain Current
V GS = 0
V = - 3.0V
20 GS(OFF)
10
5
1
1
0
+125 C
0
+25 C
+250 C
+125 0 C
- 550 C
V = - 5.0V
GS(OFF)
23 5
10 20 30 50
I D - DRAIN CURRENT (mA)
100
Output Conductance vs
Drain Current
V DG = 5.0V
V
GS(OFF)
-4.0V
20
10
-2.0V
5
-1.0V
5.0V
10V
15V
20V
10V
15V
20V
5.0V
10V
15V
20V
T A = +25 0 C
f = 1.0 K Hz
1
0.1 0.2 0.3 0.5
1
23 5
I D - DRAIN CURRENT (mA)
10
Transconductance vs
Drain Current
V DG = 10.0V
TA = +25 0 C
f = 1.0 k Hz
0
TA= -55 C
T A= +25 0 C
0
TA = +125 C
20
10
5
1
0.1
V = - 1.0V
GS(OFF)
V = - 3.0V
GS(OFF)
V = - 5.0V
GS(OFF)
0.2 0.3 0.5
1
23
I D- DRAIN CURRENT (mA)
5
10
--------------------------------------------





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