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даташит CPH6411 PDF ( Datasheet )


CPH6411 Datasheet PDF Download - ETC

Номер произв CPH6411
Описание N CHANNEL MOS SILICON TRANSISTOR
Производители ETC
логотип ETC логотип 
предварительный просмотр
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CPH6411 Даташит, Описание, Даташиты
Ordering number : ENN7383
CPH6411
N-Channl Silicon MOSFET
CPH6411
Ultrahigh-Speed Switching Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Package Dimensions
unit : mm
2151A
[CPH6411]
2.9
6 54
0.15
0.05
12 3
0.95
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
Specifications
Absolute Maximum Ratings at Ta=25°C
SANYO : CPH6
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
20
±10
6
24
1.6
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : KM
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS= ±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=3A
min
20
0.4
7.7
Ratings
typ
max
Unit
V
1 µA
±10 µA
1.3 V
11 S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91003 TS IM TA-100019 No.7383-1/4
--------------------------------------------

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CPH6411 Даташит, Описание, Даташиты
CPH6411
Continued from preceding page.
Parameter
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=3A, VGS=4.5V
ID=1.5A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4.5V, ID=6A
VDS=10V, VGS=4.5V, ID=6A
VDS=10V, VGS=4.5V, ID=6A
IS=6A, VGS=0
Switching Time Test Circuit
VIN
4.5V
0V
VIN
PW=10µs
D.C.1%
G
VDD=10V
ID=3A
RL=3.33
D VOUT
CPH6411
P.G 50S
Ratings
min typ max
Unit
20 26 m
26 37 m
1200
pF
200 pF
140 pF
20 ns
90 ns
130 ns
100 ns
13 nC
2 nC
3 nC
0.82
1.2 V
ID -- VDS
6
5
4
1.5V
3
2
VGS=1.0V
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT05509
RDS(on) -- VGS
200
Ta=25°C
150
100
1.5A ID=3.0A
50
0
0 1 2 3 4 5 6 7 8 9 10
Gate-to-Source Voltage, VGS -- V IT05511
ID -- VGS
6
VDS=10V
5
4
3
2
1
0
0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
Gate-to-Source Voltage, VGS -- V IT05510
RDS(on) -- Ta
50
40
30
20
IDID==---1-.35.A0A, V, VGGS=S=--2--.45.V5V
10
0
--60 --40 --20 0
20 40 60 80 100 120 140
Ambient Temperature, Ta -- °C
IT05512
No.7383-2/4
--------------------------------------------

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CPH6411 Даташит, Описание, Даташиты
CPH6411
yfs-- ID
5
3
VDS=10V
2
3
10
27
10 Ta= --25°C
5
3
7
5
75°C 25°C
2
1.0
7
35
23
2
IF -- VSD
VGS=0
1.0
0.1
1000
7
5
3
2
100
7
5
3
2
23
5 7 1.0
23
Drain Current, ID -- A
SW Time -- ID
5 7 10
IT05513
VDD= --10V
VGS= --4.5V
td(off)
tf
tr
td(on)
10
0.1
23
4.5
VDS= --6V
4.0 ID= --3.5A
5 7 1.0
2 3 5 7 10
Drain Current, ID -- A
VGS -- Qg
23
IT05515
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 2 4 6 8 10 12 14
Total Gate Charge, Qg -- nC
IT05517
PD -- Ta
2.0
0.1
0.2
10000
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
0.4 0.6 0.8 1.0 1.2
Diode Forward Voltage, VSD -- V IT05514
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Coss
Crss
10
0 2 4 6 8 10 12
Drain-to-Source Voltage, VDS -- V IT05516
ASO
5
3 IDP=24A
<10µs
2
10
7
ID=6A
5
3
2
1.0
7
5
1ms
10ms
DC
100ms
operation
3
2
0.1
7
Operatuon in this
area is limited by RDS(on).
5
3 Ta=25°C
2 Single pulse
0.01 Mounted on a ceramic board(900mm2!0.8mm)
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Drain-to-Source Voltage, VDS -- V
23 5
IT05518
1.6
1.5
1.0
0.5
Mounted on a ceramic board(900mm 2!0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT05519
No.7383-3/4
--------------------------------------------





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