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Z0103MN Datasheet PDF Download - NXP

Номер произв Z0103MN
Описание Triacs
Производители NXP
логотип NXP логотип 
предварительный просмотр
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Z0103MN Даташит, Описание, Даташиты
Z0103/07/09 series
Triacs
Rev. 02 — 12 September 2002
Product data
1. Product profile
1.1 Description
Passivated triacs in conventional and surface mounting packages. Intended for use in
applications requiring high bidirectional transient and blocking voltage capability.
Available in a range of gate current sensitivities for optimum performance.
Product availability:
Z0103MA; Z0103NA; Z0107MA; Z0107NA; Z0109MA; Z0109NA in SOT54B
Z0103MN; Z0103NN; Z0107MN; Z0107NN; Z0109MN; Z0109NN in SOT223.
1.2 Features
s Blocking voltage to 800 V (NA and NN s 1 A on-state RMS current.
types)
1.3 Applications
s Home appliances
s Fan controllers
s Small motor control
s Small loads in industrial process
control.
2. Pinning information
Table 1: Pinning - SOT54B (TO-92), SOT223, simplified outline and symbol
Pin Description
Simplified outline
1 terminal 2 (T2) SOT54B
2 gate (G)
(TO-92)
4
3 terminal 1 (T1)
1 terminal 1 (T1) SOT223
2 terminal 2 (T2)
3 gate (G)
4 terminal 2 (T2)
1
2
3
MSB033
1
Top view
23
MSB002 - 1
SOT54B (TO-92)
SOT223
Symbol
T2
G
T1 MBL300
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Z0103MN Даташит, Описание, Даташиты
Philips Semiconductors
Z0103/07/09 series
Triacs
3. Ordering information
3.1 Ordering options
Table 2: Ordering information
Part Number
Z0103MA
Z0103NA
Z0107MA
Z0107NA
Z0109MA
Z0109NA
Z0103MN
Z0103NN
Z0107MN
Z0107NN
Z0109MN
Z0109NN
Voltage (VDRM)
600 V
800 V
600 V
800 V
600 V
800 V
600 V
800 V
600 V
800 V
600 V
800 V
4. Limiting values
Gate Sensitivity (IGT)
3 mA
3 mA
5 mA
5 mA
10 mA
10 mA
3 mA
3 mA
5 mA
5 mA
10 mA
10 mA
Package
SOT54B (TO-92)
SOT54B (TO-92)
SOT54B (TO-92)
SOT54B (TO-92)
SOT54B (TO-92)
SOT54B (TO-92)
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDRM
repetitive peak off-state voltage
25 °C Tj 125 °C
Z0103/07/09MA; Z0103/07/09MN
Z0103/07/09NA; Z0103/07/09NN
VRRM
repetitive peak reverse voltage
25 °C Tj 125 °C
Z0103/07/09MA; Z0103/07/09MN
Z0103/07/09NA; Z0103/07/09NN
ITSM non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to surge;
Figure 2 and Figure 3
t = 20 ms
t = 16.7 ms
IT(RMS)
I2t
RMS on-state current
SOT223
SOT54B (TO-92)
I2t for fusing
all conduction angles; Figure 4
Tsp = 90 °C
Tlead = 50 °C
t = 10 ms
dIT/dt
IGM
PGM
PG(AV)
Tstg
Tj
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
ITM = 1.0 A; IG = 2 x IGT; dIG/dt = 100 mA/µs
tp = 20 µs
over any 20 ms period
Min Max Unit
- 600 V
- 800 V
- 600 V
- 800 V
-8A
- 8.5 A
-1A
-1A
- 0.35 A2s
- 20 A/µs
- 1.0 A
- 2.0 W
- 0.1 W
40 +150 °C
40 +125 °C
9397 750 10102
Product data
Rev. 02 — 12 September 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
2 of 12
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Z0103MN Даташит, Описание, Даташиты
Philips Semiconductors
Z0103/07/09 series
Triacs
1.6
Ptot
(W)
1.2
α
α
0.8
0.4
003aaa199
α=
180°
120°
90°
60°
30°
0
0 0.4 0.8 1.2
IT(RMS) (A)
α = conduction angle
Fig 1. Maximum on-state power dissipation as a
function of RMS on-state current; typical
values.
102
ITSM
(A)
10
δIT/δt limit
003aaa207
1
10
ITSM
(A)
8
003aaa200
6
4
2
0
1 10 102 103
n
n = number of cycles at f = 50 Hz
Fig 2. Maximum permissible non-repetitive peak
on-state current as a function of number of
cycles for sinusoidal currents; typical values.
1.2
IT(RMS)
(A)
0.8
0.4
003aaa201
SOT54B
(Tlead)
SOT223
(Tsp)
10-1
10-5
10-4
10-3
ts (s)
10-2
0
0 50 100 150
Tlead, Tsp (°C)
Fig 3. Maximum permissible non-repetitive peak
on-state current as a function of surge duration
for sinusoidal currents; typical values.
Fig 4. Maximum permissible RMS on-state current as
a function of lead temperature and solder point
temperature; typical values.
9397 750 10102
Product data
Rev. 02 — 12 September 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
3 of 12
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