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даташит K101 PDF электронных компонентов


K101 - KODENSHI KOREA CORP - Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)

Номер произв K101
Описание Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)
Производители KODENSHI KOREA CORP
логотип KODENSHI KOREA CORP логотип 
предварительный просмотр
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K101 Даташит, Описание, Даташиты
Photocoupler
K101 • K102 • K104
These Photocouplers consist of a Gallium Arsenide Infrared Emitting
Diode and a Silicon NPN Phototransistor per a channel.
The K101 has one channel in a 4-pin mini-flat SMD package.
The K102 has two channels in a 8-pin mini-flat SMD package.
The K104 has four channels in a 16-pin mini-flat SMD package.
FEATURES
• Mini-Flat Package
• Collector-Emitter Voltage : Min.50V
• Current Transfer Ratio : Min.50% (at IF=5mA, VCE=5V)
• Electrical Isolation Voltage : AC3750Vrms
APPLICATIONS
• Interface between two circuits of different potential
• Cordless Phone
• Programmable Logic Control
• Microcomputer
DIMENSION
K101
43
K102
(Unit : mm)
87
65
Orientation Mark
3.6 0.2
0.4 0.1
2.54 0.25
K104
12
7.0 0.5
5.2 0.2
0.4Min.
Orientation Mark
8.7 0.2
2.54 2.54
12
34
7.0 0.5
5.2 0.2
0.4Min.
16 15 14 13 12 11 10 9
Orientation Mark
18.8 0.2
2.54 2.54
123 45 6
78
7.0 0.5
5.2 0.2
0.4Min.
1/3
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K101 Даташит, Описание, Даташиты
Photocoupler
K101 • K102 • K104
MAXIMUM RATINGS
Parameter
Forward Current
Input
Reverse Voltage
Peak Forward Current*1
Power Dissipation
Collector-Emitter Breakdown Voltage
Output
Emitter-Collector Breakdown Voltage
Collector Current
Collector Power Dissipation
Input to Output Isolation Voltage*2
Storage Temperature
Operating Temperature
Lead Soldering Temperature*3
Total Power Dissipation
*1. Input current with 100µs pulse width, 1% duty cycle
*2. Measured at RH=40~60% for 1min
*3. 1/16 inch form case for 10sec
Symbol
IF
VR
IFP
PD
BVCEO
BVECO
IC
PC
Viso
Tstg
Topr
Tsol
Ptot
Rating
50
5
1
70
50
6
50
150
AC3750
-55~+125
-30~+100
260
200
(Ta=25
Unit
mA
V
A
mW
V
V
mA
mW
Vrms
mW
)
ELECTRO-OPTICAL CHARACTERISTICS
Parameter
Forward Voltage
Input Reverse Current
Capacitance
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Output
Collector Dark Current
Capacitance
Current Transfer Ratio*4
Collector-Emitter Saturation Voltage
Input-Output Capacitance
Coupled
Input-Output Isolation Resistance
Rise Time
Fall Time
*4. CTR=(IC/IF) X 100 (%)
Symbol
VF
IR
CT
BVCEO
BVECO
ICEO
CCE
CTR
VCE(SAT)
CIO
RIO
tr
tf
Condition
(Ta=25 , unless otherwise noted)
Min. Typ. Max. Unit.
IF=10mA
- 1.15 1.30 V
VR=5V
- - 10
V=0, f=1MHz
- 30 - pF
IC=0.5mA
50 -
-V
IE=0.1mA
6 - -V
IF=0, VCE=24V
- - 100 nA
VCE=0, f=1MHz
- 10 - pF
IF=5mA, VCE=5V
50 - 600 %
IF=5mA, IC=1mA
- 0.15 0.4 V
V=0, f=1MHz
- 1 - pF
RH=40~60%, V=500V - 1011 -
VCE=5V, RL=100
-3-
IC=2mA
-3-
2/3
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K101 Даташит, Описание, Даташиты
Photocoupler
K101 • K102 • K104
Forward Current vs.
Ambient Temperature
50
40
30
20
10
0
-20
0
20 40
60 80
100
Ambient Temperature Ta ( )
Collector Power Dissipation vs.
Ambient Temperature
250
200
150
100
50
0
-20 0 20 40 60 80 100
Ambient Temperature Ta ( )
Forward Current vs.
Forward Voltage
100
80
60
Ta=70
40
Ta=25
20
Ta=-55
0
0.4 0.8 1.2 1.6
Forward Voltage VF (V)
Collector Current vs.
Collector-Emitter Voltage
Ta=25
I F =30mA
40
30 IF=20mA
20 IF=10mA PC(max.)
I F =5mA
10
I F =1mA
0 2 4 6 8 10
Collector-Emitter Voltage VCE (V)
Dark Current vs.
Ambient Temperature
1
VCE=24V
0.1
0.01
0.001
0
20 40 60 80 100
Ambient Temperature Ta ( )
Collector Current vs.
Ambient Temperature
100
I F =20mA
10 IF=10mA
I F =5mA
1
I F =1mA
0
-20 0 20 40 60 80
Ambient Temperature Ta ( )
Response Time vs.
Load Resistance
500 VCE =5V
I C=2mA
Ta=25
100
10
1
0.1
0.1
1.0 2.0
Load Resistance RL ( )
Collector Current vs.
Forward Current
100
Ta=25
VCE =5V
10
1
0.1
0.01
0.001
0.1
1 10
Forward Current IF (mA)
100
Switching Time Test Circuit
VCC
R
VIN
RL
VO
Test Circuit
Input
Output
10%
90%
tr
Wave form
tf
3/3
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