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даташит G03H1202 PDF ( Datasheet )


G03H1202 Datasheet PDF Download - Infineon

Номер произв G03H1202
Описание High Speed 2-Technology
Производители Infineon
логотип Infineon логотип 
предварительный просмотр
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G03H1202 Даташит, Описание, Даташиты
www.DataSheet4U.com
IGA03N120H2
HighSpeed 2-Technology
Designed for:
- TV – Horizontal Line Deflection
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
- simple Gate-Control
C
G
E
P-TO220-3-31
(FullPAK)
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO220-3-34
(FullPAK)
Type
VCE
IC
Eoff
Tj,max
Marking
Package
Ordering Code
IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 P-TO-220-3-31 Q67040-S4648
IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 P-TO-220-3-34 Q67040-S4654
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DataSheet4U.comVC E
Triangular collector peak current (VGS = 15V)
ICpk
TC = 100°C, f = 32kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
ICpuls
-
VCE 1200V, Tj 150°C
Gate-emitter voltage
VGE
Power dissipation
Ptot
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Tj , Tstg
-
Value
1200
8.2
9
9
±20
29
-40...+150
260
Unit
V
A
V
W
°C
DataShee
DataSheet4U.com
Power Semiconductors
DataSheet4 U .com
1
Mar-04, Rev. 2.0
--------------------------------------------

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G03H1202 Даташит, Описание, Даташиты
www.DataSheet4U.com
IGA03N120H2
et4U.com
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJA
Conditions
P-TO-220-3-31
P-TO-220-3-34
Max. Value
4.3
64
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
V(BR)CES VGE=0V, IC=300µA
VCE(sat) VGE = 15V, IC=3A
Tj=25°C
Tj=150°C
VGE = 10V, IC=3A,
Tj=25°C
VGE(th) IC=90µA,VCE=VGE
I C E S DataSVhCeEe=t41U2.0c0oVm, V G E = 0V
Tj=25°C
Tj=150°C
IGES
VCE=0V,VGE=20V
gfs VCE=20V, IC=3A
Ciss
Coss
Crss
QGate
LE
VCE=25V
VGE=0V
f=1MHz
VCC=960V, IC=3A
VGE=15V
P-TO-220-3-31
min.
1200
-
-
-
2.1
-
-
-
-
-
-
-
-
-
Value
Unit
Typ. max.
- -V
2.2 2.8
2.5 -
2.4 -
3 3.9
µA
- 20
- 80
- 100 nA
2 -S
205 - pF
24 -
7-
8.6 - nC
7 - nH
DataShee
DataSheet4U.com
Power Semiconductors
DataSheet4 U .com
2
Mar-04, Rev. 2.0
--------------------------------------------

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G03H1202 Даташит, Описание, Даташиты
www.DataSheet4U.com
IGA03N120H2
et4U.com
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25°C
VCC=800V, IC=3A
VGE=0V/15V
RG=82
L σ 1) = 1 8 0 n H
Cσ1)=40pF
Energy losses include
“tail” and diode 2)
reverse recovery.
min.
-
-
-
-
-
-
-
Value
Typ.
9.2
5.2
281
29
0.14
0.15
0.29
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
Tj=150°C
tr VCC=800V, IC=3A
td(of
tf
Eon
Eoff
f
)DataSVRhGGeE=e=8t402UV./c1o5mV
Lσ1)=180nH
Cσ1)=40pF
Energy losses
include
E t s “tail” and diode2)
reverse recovery.
min.
-
-
-
-
-
-
-
Value
Typ.
9.4
6.7
340
63
0.22
0.26
0.48
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Energy ZVT, Inductive Load
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-off energy
Eoff VCC=800V, IC=3A
VGE=0V/15V
RG=82, Cr1)=4nF
Tj=25°C
Tj=150°C
min.
-
-
Value
typ.
0.05
0.09
Unit
max.
mJ
-
-
DataShee
DataSheet4U.com1
2
)
)
Leakage inductance Lσ and stray capacity Cσ due
Commutation diode from device IKP03N120H2
to
dynamic
test
circuit
in
figure
E
Power Semiconductors
DataSheet4 U .com
3
Mar-04, Rev. 2.0
--------------------------------------------





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