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CPH6412 Datasheet PDF Download - Sanyo Semicon Device

Номер произв CPH6412
Описание Ultrahigh-Speed Switching Applications
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 
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CPH6412 Даташит, Описание, Даташиты
www.DataSheet4U.com
Ordering number : ENN7607
CPH6412
N-Channel Silicon MOSFET
CPH6412
Preliminary
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Ultrahigh-Speed Switching Applications
Package Dimensions
unit : mm
2151A
[CPH6412]
2.9 0.15
6 54
0.05
Specifications
Absolute Maximum Ratings at Ta=25°C
12 3
0.95
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
30
±20
6
24
1.6
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : KN
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=3A
ID=3A, VGS=10V
ID=1.5A, VGS=4.5V
ID=1.5A, VGS=4V
min
30
1.2
4.2
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
6S
25 33 m
35 49 m
37 52 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
DataSheet4 U .com
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22004 TS IM TA-100705 No.7607-1/4
--------------------------------------------

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CPH6412 Даташит, Описание, Даташиты
www.DataSheet4U.com
CPH6412
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=5A
VDS=10V, VGS=10V, ID=5A
VDS=10V, VGS=10V, ID=5A
IS=6A, VGS=0
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=15V
ID=3A
RL=5
D VOUT
CPH6412
P.G 50S
Ratings
min typ max
Unit
690 pF
160 pF
88 pF
11 ns
45 ns
60 ns
35 ns
16 nC
3.4 nC
2.4 nC
0.84 1.2 V
ID -- VDS
6
5 3.0V
4
3
2
2.5V
1
0 VGS=2.0V
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT06300
RDS(on) -- VGS
80
Ta=25°C
70
60
50
ID=1.5A 3.0A
40
30
20
10
0
0 2 4 6 8 10 12 14 16 18 20
Gate-to-Source Voltage, VGS -- V IT06302
DataSheet4 U .com
8
VDS=10V
7
ID -- VGS
6
5
4
3
2
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V IT06301
RDS(on) -- Ta
80
70
60
50
40
30
20
I DI=D1I=.D51A=.53,A.V0,AGV,SGV=S4G=VS4=.51V0V
10
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT06303
No.7607-2/4
--------------------------------------------

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CPH6412 Даташит, Описание, Даташиты
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CPH6412
yfs-- ID
2
VDS=10V
10
7
5
3
2
Ta=25°C
--25°7C5°C
1.0
7
5
3
2
0.1
0.01
1000
7
5
3
2
23
5 7 0.1 2 3 5 7 1.0
Drain Current, ID -- A
SW Time -- ID
2 3 5 7 10
IT06304
VDD=15V
VGS=10V
100
7
td(off)
5
3 tf
2
td(on)
10
7
5
tr
3
2
1.0
0.1
23
10
VDS=10V
9 ID=5A
8
5 7 1.0
23
Drain Current, ID -- A
VGS -- Qg
5 7 10
IT06306
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18
Total Gate Charge, Qg -- nC
IT06308
PD -- Ta
2.0
IF -- VSD
10
7 VGS=0
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Diode Forward Voltage, VSD -- V IT06305
1000
7
5
Ciss f=1MHz
3
2
Coss
100 Crss
7
5
3
2
10
0
5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT06307
ASO
5
3 IDP=24A
<10µs
2
10
7
ID=6A
5
3
2
1.0
7
5
3
DC
100m1s0ms
operation
1m10s0µs
2 Operation in this
0.1 area is limited by RDS(on).
7
5
3 Ta=25°C
2 Single pulse
0.01 Mounted on a ceramic board(900mm2!0.8mm)
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
Drain-to-Source Voltage, VDS -- V IT06309
1.6
1.5
1.0
0.5
Mounted on a ceramic board(900mm 2!0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT06310
DataSheet4 U .com
No.7607-3/4
--------------------------------------------





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