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CPH3422 Datasheet PDF Download - Sanyo Semicon Device

Номер произв CPH3422
Описание Ultrahigh-Speed Switching Applications
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 
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CPH3422 Даташит, Описание, Даташиты
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Ordering number : ENN7536
CPH3422
N-Channel Silicon MOSFET
CPH3422
Ultrahigh-Speed Switching Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Package Dimensions
unit : mm
2152A
[CPH3422]
2.9
0.4
3
0.15
0.05
12
1.9
1 : Gate
2 : Source
3 : Drain
Specifications
Absolute Maximum Ratings at Ta=25°C
SANYO : CPH3
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
60
±20
1
4
0.9
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : KX
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=0.5A
ID=0.5A, VGS=10V
ID=0.5A, VGS=4V
min
60
1.2
0.45
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
0.9 S
480 630 m
640 900 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82003 TS IM TA-100219 No.7536-1/4
--------------------------------------------

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CPH3422 Даташит, Описание, Даташиты
CPH3422
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=30V, VGS=10V, ID=1A
VDS=30V, VGS=10V, ID=1A
VDS=30V, VGS=10V, ID=1A
IS=1A, VGS=0
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=30V
ID=0.5A
RL=60
D VOUT
CPH3422
P.G 50S
Ratings
min typ max
Unit
70 pF
9.0 pF
6.5 pF
5 ns
4 ns
12 ns
12 ns
3.0 nC
0.6 nC
0.6 nC
0.9 1.2 V
ID -- VDS
1.0
3.5V
0.8
0.6
VGS=3.0V
0.4
0.2
0
0
1200
1100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Drain-to-Source Voltage, VDS -- V IT05973
RDS(on) -- VGS
Ta=25°C
ID=0.5A
1000
900
800
700
600
500
400
300
0 2 4 6 8 10 12 14 16 18 20
Gate-to-Source Voltage, VGS -- V IT05975
2.0
VDS=10V
1.8
ID -- VGS
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1200
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
IT05974
1100
1000
900
800
700
600
500
I D=I0D.=5A0.,5VAG, VS=G4SV=10V
400
300
200
100
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT05976
No.7536-2/4
--------------------------------------------

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CPH3422 Даташит, Описание, Даташиты
CPH3422
yfs-- ID
5
VDS=10V
3
2
1.0
7
Ta= --25°C 75°C
5
25°C
3
2
0.1
0.01
23
100
7
VDD=30V
VGS=10V
5
5 7 0.1 2 3 5 7 1.0
Drain Current, ID -- A
SW Time -- ID
23 5
IT05977
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
100
7
5
IF -- VSD
VGS=0
0.4 0.6 0.8 1.0
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
1.2
IT05978
Ciss
3
2
td(off)
10
7 tf
5
td(on)
3 tr
2
3
2
Coss
10
7 Crss
5
3
2
1.0
0.1
10
VDS=30V
ID=1A
8
23
5
Drain Current, ID -- A
VGS -- Qg
7 1.0
IT05979
6
4
2
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Total Gate Charge, Qg -- nC
IT05981
PD -- Ta
1.2
1.0
0
f=1MHz
5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT05980
ASO
10
7
5
IDP=4A
<10µs
3
2
100µs
ID=1A
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.01
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board(900mm2!0.8mm)
2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7100
Drain-to-Source Voltage, VDS -- V IT05982
1.0
0.9
0.8
0.6
0.4
0.2
Mounted on a ceramic board(900mm 2!0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT05983
No.7536-3/4
--------------------------------------------





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