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CPH3424 Datasheet PDF Download - Sanyo Semicon Device

Номер произв CPH3424
Описание Ultrahigh-Speed Switching Applications
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 
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CPH3424 Даташит, Описание, Даташиты
www.DataSheet4U.com
Ordering number : ENN7916
CPH3424
CPH3424
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
60
±20
1.8
7.2
1
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : KZ
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=0.9A
ID=0.9A, VGS=10V
ID=0.9A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
60
1.2
1.1
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
2.1 S
170 220 m
210 300 m
220 pF
28 pF
20 pF
8 ns
5 ns
27 ns
20 ns
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
93004 TS IM TA-100207 No.7916-1/4
--------------------------------------------

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CPH3424 Даташит, Описание, Даташиты
CPH3424
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=30V, VGS=10V, ID=1.8A
VDS=30V, VGS=10V, ID=1.8A
VDS=30V, VGS=10V, ID=1.8A
IS=1.8A, VGS=0
Ratings
min typ max
Unit
6.4 nC
1.1 nC
1.1 nC
0.85
1.2 V
Package Dimensions
unit : mm
2152A
2.9
0.4
3
0.15
0.05
12
1.9
1 : Gate
2 : Source
3 : Drain
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=30V
ID=0.9A
RL=33.3
D VOUT
CPH3424
P.G 50S
SANYO : CPH3
ID -- VDS
1.8
1.6
1.4
3.0V
1.2
1.0
0.8
0.6
0.4
VGS=2.5V
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Drain-to-Source Voltage, VDS -- V IT07434
RDS(on) -- VGS
400
Ta=25°C
ID=0.9A
350
300
250
200
150
100
0 2 4 6 8 10 12 14 16 18 20
Gate-to-Source Voltage, VGS -- V IT07436
4.0
VDS=10V
3.5
ID -- VGS
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V IT07435
RDS(on) -- Ta
400
350
300
250
200
I DI=D0=.09.A9,AV, VGSG=S4=V10V
150
100
50
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT07437
No.7916-2/4
--------------------------------------------

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CPH3424 Даташит, Описание, Даташиты
CPH3424
7
5 VDS=10V
3
2
1.0
7
5
3
2
yfs-- ID
Ta= --25°7C5°C 25°C
0.1
0.01
7
5
3
2
23
5 7 0.1 2 3 5 7 1.0
Drain Current, ID -- A
SW Time -- ID
td(off)
tf
23 5
IT07438
10
7
5
3
2
1.0
0.1
2
10
VDS=30V
ID=1.8A
8
td(on)
tr
3 5 7 1.0
Drain Current, ID -- A
VGS -- Qg
VDD=30V
VGS=10V
23
5
IT07440
6
4
2
0
01234567
Total Gate Charge, Qg -- nC
IT07442
PD -- Ta
1.2
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
5
3
2
IF -- VSD
VGS=0
0.4 0.6 0.8 1.0 1.2
Diode Forward Voltage, VSD -- V IT07439
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
100
7
5
Coss
3 Crss
2
10
7
0 5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT07441
ASO
10
7
5 IDP=7.2A
<10µs
3
2
ID=1.8A
1.0
7
5
3
2
0.1 Operation in this
7 area is limited by RDS(on).
5
3 Ta=25°C
2 Single pulse
0.01 Mounted on a ceramic board (900mm2!0.8mm)
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7100
Drain-to-Source Voltage, VDS -- V IT07443
1.0
0.8
0.6
0.4
0.2
Mounted on a ceramic board (900mm 2!0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT07444
No.7916-3/4
--------------------------------------------





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