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CPH3425 - Sanyo Semicon Device - Ultrahigh-Speed Switching Applications

Номер произв CPH3425
Описание Ultrahigh-Speed Switching Applications
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 
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CPH3425 Даташит, Описание, Даташиты
www.DataSheet4U.com
5Ordering number : ENN7529
CPH3425
N-Channel Silicon MOSFET
CPH3425
Ultrahigh-Speed Switching Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Package Dimensions
unit : mm
2152A
[CPH3425]
2.9
0.4
3
0.15
0.05
12
1.9
1 : Gate
2 : Source
3 : Drain
Specifications
Absolute Maximum Ratings at Ta=25°C
SANYO : CPH3
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
100
±20
0.5
2
0.9
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : ZA
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Conditions
ID=1mA, VGS=0
VDS=100V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=250mA
ID=250mA, VGS=10V
ID=250mA, VGS=4V
min
100
1.2
0.4
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
0.8 S
1.4
1.85
1.8 2.5
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22004 TS TA-100224 No.7529-1/4
--------------------------------------------

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CPH3425 Даташит, Описание, Даташиты
CPH3425
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=50V, VGS=10V, ID=0.5A
VDS=50V, VGS=10V, ID=0.5A
VDS=50V, VGS=10V, ID=0.5A
IS=0.5A, VGS=0
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=50V
ID=0.25A
RL=200
D VOUT
CPH3425
P.G 50S
Ratings
min typ max
Unit
80 pF
6.5 pF
4 pF
6 ns
3 ns
14 ns
8 ns
3.2 nC
0.6 nC
0.6 nC
0.87 1.2 V
ID -- VDS
0.5
0.4
VGS=3.0V
0.3
0.2
0.1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Drain-to-Source Voltage, VDS -- V IT05985
RDS(on) -- VGS
4.0
Ta=25°C
3.5 ID=0.25A
3.0
2.5
2.0
1.5
1.0
0.5
0
0 2 4 6 8 10 12 14 16 18 20
Gate-to-Source Voltage, VGS -- V IT05987
1.0
VDS=10V
0.8
ID -- VGS
0.6
0.4
0.2
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V IT05986
RDS(on) -- Ta
4.0
3.5
3.0
2.5
2.0
1.5
1.0
I D=I0D.=250A.2,5VA,GVS=G4SV=10V
0.5
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT05988
No.7529-2/4
--------------------------------------------

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CPH3425 Даташит, Описание, Даташиты
CPH3425
yfs-- ID
3
2 VDS=10V
1.0
7
5
Ta=
--25°C
75°C
3 25°C
2
0.1
7
5
3
0.01
23
100
VDD=50V
7 VGS=10V
5
5 7 0.1
23
Drain Current, ID -- A
SW Time -- ID
3
2
td(off)
10
7 tf
5 td(on)
3 tr
2
5 7 1.0
IT05989
1.0
0.1
10
VDS=50V
ID=0.5A
8
23
5
Drain Current, ID -- A
VGS -- Qg
7 1.0
IT05991
6
4
2
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Total Gate Charge, Qg -- nC
IT05993
PD -- Ta
1.2
IF -- VSD
1.0
7 VGS=0
5
3
2
0.1
7
5
3
2
0.01
0.2
3
2
0.4 0.6 0.8 1.0
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
1.2
IT05990
100 Ciss
7
5
3
2
10
7
Coss
5 Crss
3
2
1.0
0
f=1MHz
5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT05992
ASO
5
3 IDP=2A
2
<10µs
1.0
7 ID=0.5A
5
3
2
0.1
7
5
3
2 Operation in this
100µs
DC
10ms
operation(Ta=25°C)
0.01 area is limited by RDS(on).
7
5 Ta=25°C
3
2
Single pulse
0.001 Mounted on a ceramic board(900mm2!0.8mm)
0.01 2 3 5 70.1 2 3 5 71.0 2 3 5 7 10 2 3 5 7100
2
Drain-to-Source Voltage, VDS -- V IT05994
1.0
0.9
0.8
0.6
0.4
0.2
Mounted on a ceramic board(900mm 2!0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT05983
No.7529-3/4
--------------------------------------------





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