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CPH6415 Datasheet PDF Download - Sanyo Semicon Device

Номер произв CPH6415
Описание General-Purpose Switching Device Applications
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 
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CPH6415 Даташит, Описание, Даташиты
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Ordering number : ENN7284A
CPH6415
CPH6415
Features
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (1200mm2!0.8mm)
Ratings
20
±10
4
16
1.6
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : KR
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=2A
ID=2A, VGS=4V
ID=1A, VGS=2.5V
ID=0.5A, VGS=1.8V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
20
0.4
3.8
Ratings
typ
max
Unit
V
1 µA
±10 µA
1.3 V
5.5 S
48 63 m
63 88 m
80 120 m
280 pF
60 pF
38 pF
13 ns
50 ns
33 ns
30 ns
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13105 TS IM TB-00001149 / 83002 TS IM TA-100009 No.7284-1/4
--------------------------------------------

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CPH6415 Даташит, Описание, Даташиты
CPH6415
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, VGS=4V, ID=4A
VDS=10V, VGS=4V, ID=4A
VDS=10V, VGS=4V, ID=4A
IS=4A, VGS=0
Ratings
min typ max
Unit
5.0 nC
0.85
nC
0.85
nC
0.88
1.2 V
Package Dimensions
unit : mm
2151A
2.9
6 54
0.15
0.05
12 3
0.95
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10µs
D.C.1%
G
VDD=10V
ID=2A
RL=5
D VOUT
P.G 50S CPH6415
SANYO : CPH6
ID -- VDS
4
3
2
VGS=1.0V
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT05024
RDS(on) -- VGS
160
Ta=25°C
140
120
100
2.0A
80
ID=0.5A
1.0A
60
40
20
0
0 2 4 6 8 10
Gate-to-Source Voltage, VGS -- V IT05026
4.0
VDS=10V
3.5
ID -- VGS
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Gate-to-Source Voltage, VGS -- V IT05025
RDS(on) -- Ta
140
120
100
80
60
IIIDDD===012..5.00AAA,,,VVVGGGSSS===12.4.85.V0VV
40
20
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT05027
No.7284-2/4
--------------------------------------------

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CPH6415 Даташит, Описание, Даташиты
CPH6415
yfs-- ID
3
2 VDS=10V
10
7
5
3
2
25°C
Ta=
--25°C
75°C
1.0
7
5
3
2
0.1
0.01 2 3 5 7 0.1
2 3 5 7 1.0
2 3 5 7 10
3
VDD=10V
2 VGS=4V
Drain Current, ID -- A
SW Time -- ID
IT05028
100
7
5 td(off)
3
2 tr
tf td(on)
10
7
5
3
2
0.1 2 3
4.0
VDS=10V
3.5 ID=4A
5 7 1.0
23
Drain Current, ID -- A
VGS -- Qg
5 7 10
IT05030
3.0
2.5
2.0
1.5
1.0
0.5
0
0 1 2 3 4 5 6 7 8 9 10
Total Gate Charge, Qg -- nC
IT05032
PD -- Ta
2.0
10
7 VGS=0
5
3
2
IF -- VSD
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.3
1000
7
5
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Diode Forward Voltage, VSD -- V IT05029
Ciss, Coss, Crss -- VDS
f=1MHz
3 Ciss
2
100
7 Coss
5 Crss
3
2
10
0 2 4 6 8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS -- V IT05031
ASO
3
2 IDP=16A
<10µs
10
7
5
ID=4A
3
2
1.0
7
5
DC
100m10sm1sms
operation
100µs
3 Operation in this
2 area is limited by RDS(on).
0.1
7
5
3 Ta=25°C
2 Single pulse
0.01 Mounted on a ceramic board(1200mm2!0.8mm)
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
23
Drain-to-Source Voltage, VDS -- V IT05033
1.6
1.5
1.0
0.5
Mounted on a ceramic board(1200mm 2!0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT05034
No.7284-3/4
--------------------------------------------





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