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N02L163WC2A функция - 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit - NanoAmp Solutions

Номер произв N02L163WC2A
Описание 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit
Производители NanoAmp Solutions 
логотип NanoAmp Solutions логотип 
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N02L163WC2A Даташит, Описание, Даташиты
NanoAmp Solutions, Inc.
N02L163WC2A670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
2Mb Ultra-Low Power Asynchronous CMOS SRAM
128K × 16 bit
The N02L163WC2A is an integrated memory
device containing a 2 Mbit Static Random Access
Memory organized as 131,072 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N02L163WC2A is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 128Kb x 16 SRAMs
Product Family
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Very low standby current
2.0µA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current
0.8mA at 3.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.8V
• Very fast output enable access time
30ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
Part Number
Package Type
48 - BGA
44 - TSOP II
48 - BGA Green
44 - TSOP II Green
Standby Operating
Current Current (Icc),
(ISB), Typical Typical
-40oC to +85oC
2.3V - 3.6V
55ns @ 2.7V
70ns @ 2.3V
2 µA
2 mA @ 1MHz
(DOC# 14-02-013 REV G ECN# 01-1270)1
The specifications of this device are subject to change without notice. For latest documentation see

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N02L163WC2A  N02L163WC2A Даташит - NanoAmp Solutions2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bitNanoAmp Solutions
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