DataSheet26.com

H04N60 даташит PDF электронных компонентов

H04N60 функция - N-Channel Power Field Effect Transistor - Hi-Sincerity Mocroelectronics

Номер произв H04N60
Описание N-Channel Power Field Effect Transistor
Производители Hi-Sincerity Mocroelectronics 
логотип Hi-Sincerity Mocroelectronics логотип 
предварительный просмотр
		

No Preview Available !

H04N60 Даташит, Описание, Даташиты
www.DataSheet4U.net
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200404
Issued Date : 2004.07.01
Revised Date : 2005.09.28
Page No. : 1/5
H04N60 Series
N-Channel Power Field Effect Transistor
Description
This advanced high voltage MOSFET is designed to withstand high
energy in the avalanche mode and switch efficiently. This new high energy
device also offers a drain-to-source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as
power suplies, converters, power motor controls and bridge circuits.
Features
Higher Current Rating
Lower RDS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
Absolute Maximum Ratings
H04N60 Series Pin Assignment
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
2
1
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3
2
1
D
H04N60 Series
Symbol:
G
S
Symbol
ID
IDM
VGS
PD
Tj, Tstg
EAS
TL
Parameter
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (TC=25oC)
H04N60E (TO-220AB)
H04N60F (TO-220FP)
Derate above 25°C
H04N60E (TO-220AB)
H04N60F (TO-220FP)
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25)
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
Value
4
16
±30
70
30
0.56
0.2
-55 to 150
250
260
Units
A
A
V
W
W/°C
°C
mJ
°C
H04N60E, H04N60F
HSMC ProdwuwctwS.pDeactiafiSchaetieotn4U.net





Всего страниц 5 Pages
Скачать PDF[ H04N60.PDF Даташит ]

Ссылка Поделиться

H04N60 Datasheet, даташиты


Related Datasheets

Номер в каталогеОписаниеПроизводители
H04N60  H04N60 Даташит - Hi-Sincerity MocroelectronicsN-Channel Power Field Effect TransistorHi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z


DataSheet26.com    |    2017    |   Контакты  |  сегодня   |   English