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H04N60 - Hi-Sincerity Mocroelectronics - N-Channel Power Field Effect Transistor

Номер произв H04N60
Описание N-Channel Power Field Effect Transistor
Производители Hi-Sincerity Mocroelectronics
логотип Hi-Sincerity Mocroelectronics логотип 
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H04N60 Даташит, Описание, Даташиты
www.DataSheet4U.net
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200404
Issued Date : 2004.07.01
Revised Date : 2005.09.28
Page No. : 1/5
H04N60 Series
N-Channel Power Field Effect Transistor
Description
This advanced high voltage MOSFET is designed to withstand high
energy in the avalanche mode and switch efficiently. This new high energy
device also offers a drain-to-source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as
power suplies, converters, power motor controls and bridge circuits.
Features
Higher Current Rating
Lower RDS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
Absolute Maximum Ratings
H04N60 Series Pin Assignment
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
2
1
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3
2
1
D
H04N60 Series
Symbol:
G
S
Symbol
ID
IDM
VGS
PD
Tj, Tstg
EAS
TL
Parameter
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (TC=25oC)
H04N60E (TO-220AB)
H04N60F (TO-220FP)
Derate above 25°C
H04N60E (TO-220AB)
H04N60F (TO-220FP)
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25)
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
Value
4
16
±30
70
30
0.56
0.2
-55 to 150
250
260
Units
A
A
V
W
W/°C
°C
mJ
°C
H04N60E, H04N60F
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H04N60 Даташит, Описание, Даташиты
www.DataSheet4U.net
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200404
Issued Date : 2004.07.01
Revised Date : 2005.09.28
Page No. : 2/5
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance Junction to Case Max.
RθJA Thermal Resistance Junction to Ambient Max.
TO-220AB
TO-220FP
Value
62.5
1.3
5
Units
°C/W
°C/W
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Characteristic
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
Drain-Source Leakage Current (VDS=600V, VGS=0V)
Drain-Source Leakage Current (VDS=480V, VGS=0V, Tj=125°C)
Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V)
Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V)
Gate Threshold Voltage (VDS=VGS, ID=250uA)
Static Drain-Source On-Resistance (VGS=10V, ID=2A)*
Forward Transconductance (VDS=15V, ID=2A)*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, VDS=25V, f=1MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
(VDD=300V, ID=4A, RG=9.1,
VGS=10V)*
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS=480V, ID=4A, VGS=10V)*
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
LS
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
*: Pulse Test: Pulse Width 300us, Duty Cycle2%
Min. Typ. Max. Unit
600 - - V
- - 1 uA
- - 50 uA
- - 100 nA
- - -100 nA
2 - 4V
- - 2.2
2 - - mhos
- 540 -
- 125 -
pF
-8-
- 12 -
-7-
ns
- 19 -
- 10 -
-5-
- 2.7 - nC
-2-
- 4.5 - nH
- 7.5 - nH
Source-Drain Diode
Symbol
VSD Forward On Voltage(1)
ton Forward Turn-On Time
trr Reverse Recovery Time
**: Negligible, Dominated by circuit inductance
Characteristic
IS=4A, VGS=0V, TJ=25oC
IS=2A, VGS=0V, dIS/dt=100A/us
Min. Typ. Max. Units
- - 1.6 V
- ** - ns
- 302 -
ns
H04N60E, H04N60F
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H04N60 Даташит, Описание, Даташиты
www.DataSheet4U.net
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : MOS200404
Issued Date : 2004.07.01
Revised Date : 2005.09.28
Page No. : 3/5
10
9
8
7
6
5
4
3
2
1
0
0
On-Region Characteristic
VGS=8V
VGS=10V
VGS=6V
VGS=5V
VGS=4V
2468
VDS, Drain-Source Voltage (V)
10
Capacitance Characteristics
1000
800
600
Crss
400
200
Ciss
Coss
0
0.1 1 10
VDS, Deain-Source Voltage (V)
100
On Resistance Variation with Temperature
2.500
2.400
2.300
2.200
VGS=10V
2.100
2.000
1.900
ID=3A
1.800
1.700
1.600
1.500
0
25 50 75 100 125
TC, Case Temperature (oC)
150
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
0
Typical On-Resistance & Drain Current
VGS=10V
VGS=15V
1 2 3 4 5 6 7 8 9 10 11 12
ID, Drain Current (A)
H04N60E, H04N60F
Drain Current Variation with Gate Voltage and
Temperature
6
VDS=10 V
5
Tc=25oC
4
3
2
1
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
VGS, Gate-Source Voltage (V)
Maximum Safe Operating Area
10
1ms
100ms
1
10ms
0.1
10
100
VDS, Drain-Source Voltage (V)
1000
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