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CPH3427 - Sanyo - N-Channel Silicon MOSFET

Номер произв CPH3427
Описание N-Channel Silicon MOSFET
Производители Sanyo
логотип Sanyo логотип 
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CPH3427 Даташит, Описание, Даташиты
Ordering number : ENN7917
CPH3427
CPH3427
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
100
±20
1
4
1
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : ZC
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0
VDS=100V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=0.5A
ID=0.5A, VGS=10V
ID=0.5A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
100
1.2
0.7
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
1.4 S
480 630 m
580 810 m
240 pF
20 pF
12 pF
8 ns
3 ns
30 ns
11 ns
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
93004 TS IM TA-100216 No.7917-1/4
--------------------------------------------

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CPH3427 Даташит, Описание, Даташиты
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
2152A
2.9
0.4
3
12
1.9
CPH3427
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=50V, VGS=10V, ID=1A
VDS=50V, VGS=10V, ID=1A
VDS=50V, VGS=10V, ID=1A
IS=1A, VGS=0
Ratings
min typ max
Unit
6.5 nC
1.1 nC
1.1 nC
0.82
1.2 V
Switching Time Test Circuit
0.15
0.05
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=50V
ID=0.5A
RL=100
D VOUT
CPH3427
P.G 50S
ID -- VDS
1.0
0.8
0.6
0.4
2.5V
0.2
0
0
1000
900
VGS=2.0V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Drain-to-Source Voltage, VDS -- V IT07445
RDS(on) -- VGS
Ta=25°C
ID=0.5A
800
700
600
500
400
300
0 2 4 6 8 10 12 14 16 18 20
Gate-to-Source Voltage, VGS -- V IT07447
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1000
ID -- VGS
VDS=10V
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
IT07446
900
800
700
600
500
I D=0.I5DA=,0V.5GAS,=V4VGS=10V
400
300
200
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT07448
No.7917-2/4
--------------------------------------------

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CPH3427 Даташит, Описание, Даташиты
CPH3427
5
VDS=10V
3
2
1.0
7
5
3
2
yfs-- ID
25°C
Ta= --25°C75°C
0.1
0.01
7
5
3
2
10
7
5
3
2
23
5 7 0.1 2 3 5 7 1.0
Drain Current, ID -- A
SW Time -- ID
23 5
IT07449
td(off)
VDD=50V
VGS=10V
tf
td(on)
tr
1.0
0.1
2
10
VDS=50V
ID=1A
8
3 5 7 1.0
Drain Current, ID -- A
VGS -- Qg
23
IT07451
6
4
2
0
0 12 34 5 67
Total Gate Charge, Qg -- nC
IT07453
PD -- Ta
1.2
3
2 VGS=0
IF -- VSD
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.3
7
5
3
2
0.4 0.5 0.6 0.7 0.8 0.9 1.0
Diode Forward Voltage, VSD -- V IT07450
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
100
7
5
3 Coss
2
Crss
10
7
5
0 5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT07452
ASO
7
5
<10µs
3 IDP=4A
2
1.0 ID=1A
7
5
3
2
0.1
7
5
3
1ms 100µs
DC operation1(0T0am=s2150°mCs)
2 Operation in this
0.01 area is limited by RDS(on).
7
5
3
2
0.001
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2!0.8mm)
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2
Drain-to-Source Voltage, VDS -- V IT07454
1.0
0.8
0.6
0.4
0.2
Mounted on a ceramic board (900mm 2!0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT07455
No.7917-3/4
--------------------------------------------





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