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даташит CPH3430 PDF ( Datasheet )


CPH3430 Datasheet PDF Download - Sanyo

Номер произв CPH3430
Описание N-Channel Silicon MOSFET
Производители Sanyo
логотип Sanyo логотип 
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CPH3430 Даташит, Описание, Даташиты
Ordering number : ENN8175
CPH3430
CPH3430
Features
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
60
±10
2
8
1
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : ZF
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=4V
ID=1A, VGS=2.5V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
60
0.4
1.8
Ratings
typ
max
Unit
V
1 µA
±10 µA
1.3 V
3.6 S
170 220 m
190 270 m
325 pF
29 pF
21 pF
11 ns
17 ns
40 ns
27 ns
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11205PE TS IM TA-100257 No.8175-1/4
--------------------------------------------

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CPH3430 Даташит, Описание, Даташиты
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
2152A
2.9
0.4
3
12
1.9
CPH3430
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=30V, VGS=4V, ID=2A
VDS=30V, VGS=4V, ID=2A
VDS=30V, VGS=4V, ID=2A
IS=2A, VGS=0
Ratings
min typ max
4.2
1.1
1.1
0.86
1.2
Switching Time Test Circuit
Unit
nC
nC
nC
V
0.15
0.05
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
VIN
4V
0V
VIN
PW=10µs
D.C.1%
G
VDD=30V
ID=1A
RL=30
D VOUT
CPH3430
P.G 50S
ID -- VDS
2.0
1.8
1.6
1.4
1.2
1.0 VGS=1.5V
0.8
0.6
0.4
0.2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT06812
RDS(on) -- VGS
500
Ta=25°C
ID=1.0A
400
300
200
100
0
0 2 4 6 8 10
Gate-to-Source Voltage, VGS -- V IT06814
4.0
VDS=10V
3.5
ID -- VGS
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0
Gate-to-Source Voltage, VGS -- V IT06813
RDS(on) -- Ta
400
350
300
250
200
150
I D=I 1DA=1, VA,GVS=G2S.=5V4.0V
100
50
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT06815
No.8175-2/4
--------------------------------------------

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CPH3430 Даташит, Описание, Даташиты
CPH3430
10
7 VDS=10V
5
3
2
1.0
7
5
3
2
yfs-- ID
Ta= --25°C
75°C
25°C
0.1
0.01
100
7
23
5 7 0.1 2 3 5 7 1.0
Drain Current, ID -- A
SW Time -- ID
23 5
IT06816
VDD=30V
VGS=4V
5 td(off)
3
tf
2
tr td(on)
10
7
5
0.1 2
4
VDS=30V
ID=2.0A
3 5 7 1.0
Drain Current, ID -- A
VGS -- Qg
2
35
IT06818
3
2
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Total Gate Charge, Qg -- nC
IT06820
PD -- Ta
1.2
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
1000
7
5
3
2
IF -- VSD
VGS=0
0.4 0.6 0.8 1.0 1.2
Diode Forward Voltage, VSD -- V IT06817
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
100
7
5
Coss
3 Crss
2
10
7
0 5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT06819
ASO
10
7
5
IDP=8A
<10µs
3 ID=2A
2
1.0
7
10ms
5
3
2
0.1 Operation in this
7 area is limited by RDS(on).
5
3 Ta=25°C
2 Single pulse
0.01 Mounted on a ceramic board(900mm2!0.8mm)
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7100
Drain-to-Source Voltage, VDS -- V IT06821
1.0
0.8
0.6
0.4
0.2
Mounted on a ceramic board (900mm 2!0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT09129
No.8175-3/4
--------------------------------------------





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