DataSheet26.com

даташит H02N60SF PDF ( Datasheet )


H02N60SF Datasheet PDF Download - HI-SINCERITY

Номер произв H02N60SF
Описание N-Channel Power Field Effect Transistor
Производители HI-SINCERITY
логотип HI-SINCERITY логотип 
предварительный просмотр
1Page
		

No Preview Available !

H02N60SF Даташит, Описание, Даташиты
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200504
Issued Date : 2005.05.01
Revised Date : 2005.09.28
Page No. : 1/6
H02N60S Series
N-Channel Power Field Effect Transistor
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Features
Robust High Voltage Termination
Avalanc he Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast
Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Absolute Maximum Ratings
H02N60S Series Pin Assignment
Tab
3
2
1
Tab
3
2
Tab 1
3-Lead Plastic TO-252
Package Code: J
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic TO-251
Package Code: I
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
2
1
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3
2
1
D
H02N60S Series
Symbol:
G
S
Symbol
ID
IDM
VGS
PD
Tj, Tstg
EAS
TL
Parameter
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (TC=25oC)
H02N60SI (TO-251) / H02N60SJ (TO-252)
H02N60SE (TO-220AB)
H02N60SF (TO-220FP)
Derate above 25°C
H02N60SI (TO-251) / H02N60SJ (TO-252)
H02N60SE (TO-220AB)
H02N60SF (TO-220FP)
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25)
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
Value
2
8
±30
50
50
25
0.4
0.4
0.33
-55 to 150
35
260
Units
A
A
V
W
W/°C
°C
mJ
°C
H02N60SI, H02N60SJ, H02N60SE, H02N60SF
HSMC Product Specification
--------------------------------------------

No Preview Available !

H02N60SF Даташит, Описание, Даташиты
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200504
Issued Date : 2005.05.01
Revised Date : 2005.09.28
Page No. : 2/6
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance Junction to Case Max.
RθJA Thermal Resistance Junction to Ambient Max.
Value
TO-251 / TO-252
TO-220AB
TO-220FP
62.5
Units
2
2 °C/W
3.3
°C/W
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Characteristic
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
Drain-Source Leakage Current (VDS=600V, VGS=0V)
Drain-Source Leakage Current (VDS=480V, VGS=0V, Tj=125°C)
Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V)
Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V)
Gate Threshold Voltage (VDS=VGS, ID=250uA)
Static Drain-Source On-Resistance (VGS=10V, ID=1A)*
gFS Forward Transconductance (VDS50V, ID=1A)*
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss Reverse Transfer Capacitance
td(on) Turn-on Delay Time
tr Rise Time
td(off) Turn-off Delay Time
(VDD=300V, ID=2A, RG=18,
VGS=10V)*
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
(VDS=300V, ID=6A, VGS=10V)*
Qgd Gate-Drain Charge
LD
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
LS
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
*: Pulse Test: Pulse Width 300us, Duty Cycle2%
Min. Typ. Max. Unit
600 - - V
- - 1 uA
- - 50 uA
- - 100 nA
- - -100 nA
2 - 4V
- - 5
1 - - mhos
- 435 -
- 56 - pF
- 9.2 -
- 12 -
- 21 -
ns
- 30 -
- 24 -
- 13 22
- 2 - nC
-6-
- 4.5 - nH
- 7.5 - nH
Source-Drain Diode
Symbol
VSD Forward On Voltage(1)
ton Forward Turn-On Time
trr Reverse Recovery Time
**: Negligible, Dominated by circuit inductance
Characteristic
IS=2A, VGS=0V, TJ=25oC
IS=2A, VGS=0V, dIS/dt=100A/us
Min. Typ. Max. Units
- - 1.6 V
- ** - ns
- 340 -
ns
H02N60SI, H02N60SJ, H02N60SE, H02N60SF
HSMC Product Specification
--------------------------------------------

No Preview Available !

H02N60SF Даташит, Описание, Даташиты
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200504
Issued Date : 2005.05.01
Revised Date : 2005.09.28
Page No. : 3/6
TO-252 Dimension
M Marking:
A a1 Pb Free Mark
Pb-Free: " . " (Note)
Normal: None H
J
F 02N60S
1
a5
L
C
G
23
a2
H
a1
Date Code
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
N Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
3-Lead TO-252 Plastic
Surface Mount Package
HSMC Package Code: J
DIM Min. Max.
A 6.35 6.80
C 4.80 5.50
F 1.30 1.70
G 5.40 6.25
H 2.20 3.00
L 0.40 0.90
M 2.20 2.40
N 0.90 1.50
a1 0.40 0.65
a2 - *2.30
a5 0.65 1.05
*: Typical, Unit: mm
A
B
C
D
a1
E
J
K
a2
y2
F
y1
M
a1
Marking:
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
HJ
0 2N6 0S
GI
y1
H
L
a2
y1
N
a1
O
Date Code
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
y2
3-Lead TO-252 Plastic
Surface Mount Package
HSMC Package Code: J
DIM Min. Max.
A 6.40 6.80
B - 6.00
C 5.04 5.64
D - *4.34
E 0.40 0.80
F 0.50 0.90
G 5.90 6.30
H 2.50 2.90
I 9.20 9.80
J 0.60 1.00
K - 0.96
L 0.66 0.86
M 2.20 2.40
N 0.70 1.10
O 0.82 1.22
a1 0.40 0.60
a2 2.10 2.50
y1 -
5o
y2 -
3o
*: Typical, Unit: mm
H02N60SI, H02N60SJ, H02N60SE, H02N60SF
HSMC Product Specification
--------------------------------------------





Всего страниц 6 Pages
Скачать PDF[ H02N60SF.PDF Даташит ]

Ссылка Поделиться



Related Datasheets

Номер в каталогеОписаниеПроизводители
H02N60SN-Channel Power Field Effect TransistorHI-SINCERITY
HI-SINCERITY
H02N60SEN-Channel Power Field Effect TransistorHI-SINCERITY
HI-SINCERITY
H02N60SFN-Channel Power Field Effect TransistorHI-SINCERITY
HI-SINCERITY
H02N60SIN-Channel Power Field Effect TransistorHI-SINCERITY
HI-SINCERITY


Номер в каталоге Описание Производители
157UD2

Dual op amp

ETC 1
ETC 1
6MBP200RA-060

Intelligent Power Module

Fuji Electric
Fuji Electric
ADF41020

18 GHz Microwave PLL Synthesizer

Analog Devices
Analog Devices
AN-SY6280

Low Loss Power Distribution Switch

Silergy
Silergy
AP6354

2x2 WiFi + Bluetooth4.1 Module

AMPAK
AMPAK

Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z


DataSheet26.com    |    2017    |   Контакты    |    Поиск