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9013 - Unisonic Technologies - NPN SILICON EPITAXIAL TRANSISTOR

Номер произв 9013
Описание NPN SILICON EPITAXIAL TRANSISTOR
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 
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9013 Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
9013
NPN EPITAXIAL SILICON TRANSISTOR
1W OUTPUT AMPLIFIER OF
POTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION
FEATURES
* High total power dissipation. (625mW)
* High collector current. (500mA)
* Excellent hFE linearity.
* Complementary to UTC 9012
1
TO-92
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
9013L-x-T92-B
9013G-x-T92-B
TO-92
9013L-x-T92-K
9013G-x-T92-K
TO-92
Note: Pin assignment: E: Emitter B: Base C: Collector
Pin Assignment
123
EBC
EBC
Packing
Tape Box
Bulk
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., LTD
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9013 Даташит, Описание, Даташиты
9013
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
5
V
Collector current
IC 500 mA
Collector dissipation
PC 625 mW
Junction Temperature
TJ 125 °C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
VBE(on)
CLASSIFICATION OF hFE1
TEST CONDITIONS
IC=-100A, IE=0
IC=1mA, IB=0
IE=100A, IC=0
VCB=25V, IE=0
VEB=3V, IC=0
VCE=1V, IC=50mA
VCE=1V, IC=500mA
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=1V, IC=10mA
MIN TYP MAX UNIT
40 V
20 V
5V
100 nA
100 nA
64 120
40 120 300
0.16 0.6
V
0.91 1.2
V
0.6 0.67 0.7
V
RANK
RANGE
D
64-91
E
78-112
F
96-135
G
112-166
H
144-202
I
190-300
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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9013 Даташит, Описание, Даташиты
9013
TYPICAL CHARACTERICS
20
18
16
14
12
10
8
6
4
2
0
0
Static Characteristic
IB=140μA
IB=120μA
IB=100μA
IB=80μA
IB=60μA
IB=40μA
IB=20μA
10 20
30 40 50
Collector - Emitter Voltage, VCE (V)
NPN EPITAXIAL SILICON TRANSISTOR
1000
500
300
Dc Current Gain
VCE=1V
100
50
30
10
5
3
1
1 3 5 10 30 50 100 300 1000 3000 10000
Collector Current, IC (mA)
10000
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
IC=10IB
3000
1000
500
300
VBE (SAT)
100
50
30
VCE (SAT)
10
1 3 10 30 100 300 1000 3000 10000
Collector Current, IC (mA)
Current Gain-Bandwidth Product
1000
500
300
IC=10IB
100
50 VCE=6V
30
10
5
3
1
1 3 10 30 100 300 1000 3000 10000
Collector Current, IC (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-030.C
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