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I2N60 - nELL - N-Channel Power MOSFET

Номер произв I2N60
Описание N-Channel Power MOSFET
Производители nELL
логотип nELL логотип 
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I2N60 Даташит, Описание, Даташиты
SEMICONDUCTOR
I2N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
12A, 600Volts
DESCRIPTION
The Nell 12N60 is a three-terminal silicon
device with current conduction capability of
12A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies. DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
FEATURES
RDS(ON) = 0.8Ω @ VGS = 10V
Ultra low gate charge(54nC max.)
Low reverse transfer capacitance
(CRSS = 25pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
12
600
0.8 @ VGS = 10V
54
D
GDS
TO-220AB
(12N60A)
GDS
TO-220F
(12N60AF)
D (Drain)
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
TC=25°C
TC=100°C
lAR=12A,RGS=50Ω, VGS=10V
EAS Single pulse avalanche energy (Note 2)
lAS=12A, L = 10mH
dv/dt
Peak diode recovery dv/dt(Note 3)
PD Total power dissipation
TC=25°C
TO-220AB
TO-220F
TJ
TSTG
Operation junction temperature
Storage temperature
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS=12A, VDD=50V, L= 10mH, RGS=25Ω, starting TJ = 25 °C.
3.ISD ≤ 12A, di/dt ≤ 200A/µs, VDD V(BR)DSS, starting TJ = 25°C.
www.nellsemi.com
Page 1 of 7
VALUE
600
600
±30
12
7.4
48
12
24
790
4.5
225
51
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
V /ns
W
ºC
lbf.in (N.m)
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I2N60 Даташит, Описание, Даташиты
SEMICONDUCTOR
I2N60 Series RRooHHSS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(j-a)
Thermal resistance, junction to ambient
TO-220AB
TO-220F
TO-220AB
TO-220F
Min. Typ. Max.
0.56
2.4
62.5
62.5
UNIT
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
OFF CHARACTERISTICS
V(BR)DSS
Drain to source breakdown voltage
ID = 250µA, VGS = 0V
▲ ▲V(BR)DSS/ TJ Breakdown voltage temperature coefficient ID = 250µA, VDS =VGS
IDSS
Drain to source leakage current
VDS=600V, VGS=0V
VDS=480V, VGS=0V
TC = 25°C
TC=125°C
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
ON CHARACTERISTICS
RDS(ON)
Static drain to source on-state resistance
VGS(TH)
Gate threshold voltage
DYNAMIC CHARACTERISTICS
VGS = 10V, lD = 6A
VGS=VDS, ID=250μA
CISS
Input capacitance
COSS
Output capacitance
CRSS
Reverse transfer capacitance
RG Gate resistance
SWITCHING CHARACTERISTICS
VDS = 25V, VGS = 0V, f =1MHz
VDS = 0V, VGS = 0V, f =1MHz
td(ON)
tr
td(OFF)
Turn-on delay time
Rise time
Turn-off delay time
VDD = 300V, VGS = 10V
ID = 12A, RGS = 25Ω (Note1,2)
tf
QG
QGS
QGD
Fall time
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
VDD = 480V, VGS = 10V
ID = 12A, (Note1,2)
Min.
600
2
0.2
Typ.
0.7
0.6
1480
200
25
30
115
95
85
42
8.6
21
Max. UNIT
V
V/ºC
10
μA
100
100
-100
nA
0.8 Ω
4V
1900
270
35
1.2
pF
Ω
70
240
ns
200
180
54
nC
www.nellsemi.com
Page 2 of 7
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I2N60 Даташит, Описание, Даташиты
SEMICONDUCTOR
I2N60 Series RRooHHSS
Nell High Power Products
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD Diode forward voltage
ISD = 12A, VGS = 0V
1.4 V
IS(ISD)
Continuous source to drain current
ISM Pulsed source current
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
G
(Gate)
12
A
48
trr Reverse recovery time
Qrr Reverse recovery charge
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
ISD = 12A, VGS = 0V,
dIF/dt = 100A/µs
S (Source)
380 ns
3.5 μC
ORDERING INFORMATION SCHEME
Current rating, ID
12 = 12A
MOSFET series
N = N-Channel
Voltage rating, VDS
60 = 600V
Package type
A = TO-220AB
AF = TO-220F
12 N 60 A
TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
Fig.1B Peak diode recovery dv/dt waverforms
D.U.T.
+
-
+
VDS
-
L
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* lSD controlled by pulse period
* D.U.T.-Device under test
VDD
VGS
(Driver)
lSD
(D.U.T)
VDS
(D.U.T)
P.W.
Period
D= P.W.
Period
VGS=10V
lFM, Body Diode forward current
di/dt
lRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
www.nellsemi.com
Page 3 of 7
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