S7482 PDF даташит
Спецификация S7482 изготовлена «Hamamatsu» и имеет функцию, называемую «Si PIN photodiode». |
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Детали детали
Номер произв | S7482 |
Описание | Si PIN photodiode |
Производители | Hamamatsu |
логотип |
4 Pages
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PHOTODIODE
Si PIN photodiode
S6431, S6432, S7481, S7482
High-speed detector with surface-mount plastic package
S6431, S6432, S7481 and S7482 are high-speed APC detectors developed for monitoring laser diodes with a peak wavelength shorter than 700
nm. All types are designed for surface mount, and S6431 and S6432 have the terminals for positioning easily.
Features
l High-speed response at low reverse voltage
S6431, S7481 (φ0.8 mm) : 500 MHz Typ. (VR=2.5 V)
S6432, S7482 (φ0.6 mm) : 600 MHz Typ. (VR=2.5 V)
l S6431, S6432: Clear plastic package with wire
connection terminals (4 × 4.8 mm)
l High sensitivity: 0.48 A/W Typ. (λ=660 nm)
Applications
l Laser diode monitor of optical disk unit (high-speed APC)
l Sensor for red laser diode
s General ratings / Absolute maximum ratings
Type No.
S6431
S6432
S7481
S7482
Dimensional
outline
Package
➀
Plastic
➁
Active area
size
(mm)
φ0.8
φ0.6
φ0.8
φ0.6
Effective active
area
(mm2)
0.5
0.28
0.5
0.28
Absolute maximum ratings
Reverse Power Operating Storage
voltage dissipation temperature temperature
VR Max.
P
Topr
Tstg
(V)
(mV)
(°C)
(°C)
20 50 -25 to +85 -40 to +100
s Electrical and optical characteristics
Type No.
Spectral Peak
response sensitivity
range wavelength
λ λp
(nm) (nm)
Photo sensitivity
S
(A/W)
λp
660 780 830
nm nm nm
Short
circuit
current
Isc
100 lx
Dark
current
ID
VR=2.5 V
Temp.
coefficient
of
ID
TCID
Cut-off
frequency
fc
VR=2.5 V
RL=50 Ω
Typ. Max.
Min. Typ.
(µA) (nA) (nA) (times/°C) (MHz) (MHz)
Terminal
capacitance
Ct
VR=2.5 V
f=1 MHz
Typ. Max.
(pF) (pF)
NEP
VR=2.5 V
(W/Hz1/2)
S6431
0.48 300 500 6 12
S6432
S7481
320 to
1000
760
0.5
0.48
0.5
0.45
0.25
0.48
0.01 0.3
1.15
400 600
300 500
3
6
6
12
3.6 × 10-15
S7482
0.25 400 600 3 6
*1: λ=680 nm
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Si PIN photodiode S6431, S6432, S7481, S7482
s Spectral response
0.6
0.5
(Typ. Ta=25 ˚C)
s Dark current vs. reverse voltage
10 pA
S6431, S7481
(Typ. Ta=25 ˚C)
0.4 1 pA
0.3
S6432, S7482
0.2 100 fA
0.1
0
200 400 600 800 1000
WAVELENGTH (nm)
10 fA
0.01
0.1 1
10
REVERSE VOLTAGE (V)
100
KPINB0171EA
KPINB0172EA
s Dark current temperature characteristics
10 nA
(Typ. VR=2.5 V)
s Terminal capacitance vs. reverse voltage
10 pF
(Typ. Ta=25 ˚C, f=1 MHz)
1 nA
100 pA
10 pA
S6431, S7481
S6432, S7482
S6431, S7481
S6432, S7482
1 pA
100 fA
-20
0 20 40 60
AMBIENT TEMPERATURE (˚C)
80
1 pF
0.1
1 10
REVERSE VOLTAGE (V)
100
KPINB0173EA
KPINB0174EA
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Si PIN photodiode S6431, S6432, S7481, S7482
s Cut-off frequency vs. reverse voltage
1 GHz
(Typ. Ta=25 ˚C, λ=680 nm, RL=50 Ω)
S6432, S7482
500 MHz
S6431, S7481
100 MHz
1
5
REVERSE VOLTAGE (V)
10
KPINB0175EA
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Номер в каталоге | Описание | Производители |
S7481 | Si PIN photodiode | Hamamatsu |
S7482 | Si PIN photodiode | Hamamatsu |
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DataSheet26.com | 2020 | Контакты | Поиск |