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SEGC10GH PDF даташит

Спецификация SEGC10GH изготовлена ​​​​«Zowie Technology» и имеет функцию, называемую «High Efficient Rectifier».

Детали детали

Номер произв SEGC10GH
Описание High Efficient Rectifier
Производители Zowie Technology
логотип Zowie Technology логотип 

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SEGC10GH Даташит, Описание, Даташиты
ZOWIE
SEGC10DH THRU SEGC10MH
FEATURES
* Halogen-free type
* Compliance to RoHS product
* GPRC (Glass passivated rectifier chip) inside
* Glass passivated cavity-free junction
* Lead less chip form, no lead damage
* Low power loss , High efficiency
* High current capability
* Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
High Efficient Rectifier
OUTLINE DIMENSIONS
Case : 1206-S
3.40 ± 0.1
(200V~1000V / 1.0A)
Unit : mm
R0.40
APPLICATION
* General purpose rectification
* Surge absorption
0.70 ± 0.2
0.70 ± 0.2
MECHANICAL DATA
Case : Packed with FRP substrate and epoxy underfilled
Terminals : Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity : Cathode Band, Laser marking
Weight : 0.012 gram
PACKING
* 3,000 pieces per 7" (178mm ± 2mm) reel
* 4 reels per box
* 6 boxes per carton
Equivalent to SOD-123
MARKING
Cathode mark
10
ED.
Series code
(High Efficient Rectifier)
Amps class
(1.0Amps)
Halogen-free type
Voltage class
Voltage class : D = 200V, G = 400V, J = 600
K = 800V, M = 1000V
Absolute Maximum Ratings (Ta = 25 oC)
ITEM
Repetitive peak reverse voltage
Average forward current
Peak forward surge current
Rating for fusing ( t<8.3ms)
Reverse recovery time
Operating storage temperature Range
Symbol
Conditions
VRRM
IF(AV)
IFSM
8.3ms single half sine-wave
I2t
Trr IF = 0.5A, IR = 1.0A, Irr = 0.25A
Tj,TSTG
SEGC10
DH GH JH KH
200 400 600 800
1.0
15
0.9
50 75
-65 to +175
MH
1000
Unit
V
A
A
A2sec
nS
oC
ITEM
Symbol
Conditions
Type
Min.
Forward voltage
VF IF = 1.0A
SEGC10DH
SEGC10GH
SEGC10JH
SEGC10KH
SEGC10MH
-
-
-
-
-
Repetitive peak reverse current
IRRM
VR = Max. VRRM , Ta = 25 oC
-
Junction capacitance
Cj VR = 4V, f = 1.0 MHz
-
Thermal resistance
Rth(JA)
Rth(JL)
Junction to ambient (NOTE)
Junction to lead (NOTE)
-
-
NOTES : Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas.
Typ.
0.95
1.10
1.50
1.50
1.50
0.10
9
123
45
Max.
1.00
1.25
1.70
1.70
1.70
5
-
-
-
Unit
V
uA
pF
oC/W
REV. 1
2013/09









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SEGC10GH Даташит, Описание, Даташиты
ZOWIE
SEGC10DH THRU SEGC10MH
(200V~1000V / 1.0 A)
FIG.1 - TYPICAL FORWARD CURRENT DERATING CURVE
1.0
RESISTIVE OR
INDUCTIVE LOAD
0.5
0
0 25 50 75 100 125 150 175
LEAD TEMPERATURE, oC
10.00
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
1.00
0.10
TJ=25oC
0.01
0.4
SEGC10DH
SEGC10GH
SEGC10JH~SEGC10MH
0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
2.0
FIG.5 - TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
TJ = 25oC
10
6
4
2
1
.1 .2 .4
1.0 2 4
10 20 40
REVERSE VOLTAGE, VOLTS
100
REV. 1
20
15
10
5
0
1
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
8.3ms SINGLE HALF SINE-WAVE
10
NUMBER OF CYCLES AT 60Hz
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER BRIDGE ELEMENT
100
10.0
1.0
TJ=150oC
TJ=125oC
0.10
TJ=25oC
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
1000
FIG.6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.01
0.10 1.0 10
t , PULSE DURATION, sec
100
2013/09










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Номер в каталогеОписаниеПроизводители
SEGC10GHHigh Efficient RectifierZowie Technology
Zowie Technology

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