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PDF BCR16CS-16LB Data sheet ( Hoja de datos )
| Número de pieza | BCR16CS-16LB | |
| Descripción | Triac | |
| Fabricantes | Renesas | |
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BCR16CS-16LB
Triac
Medium Power Use
Features
IT (RMS) : 16 A
VDRM : 800 V
IFGTI, IRGTI, IRGT III : 30 mA
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
123
Preliminary Datasheet
R07DS0226EJ0100
Rev.1.00
Dec 14, 2010
The product guaranteed maximum junction
temperature of 150°C
Non-Insulated Type
Planar Passivation Type
2, 4
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
4. T2 Terminal
Applications
Contactless AC switch, light dimmer, electronic flasher unit, hair drier, control of household equipment such as TV sets,
stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control,
solid state relay, copying machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Symbol
IT (RMS)
ITSM
I2t
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Symbol
VDRM
VDSM
Ratings
16
160
106.5
5
0.5
10
2
– 40 to +150
– 40 to +150
1.3
Voltage class
16
800
960
Unit
V
V
Unit
A
A
A2s
W
W
V
A
C
C
g
Conditions
Commercial frequency sine full wave
360° conduction Tc = 125CNote3
60Hzsinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
R07DS0226EJ0100 Rev.1.00
Dec 14, 2010
Page 1 of 7
1 page  
BCR16CS-16LB
Latching Current vs.
Junction Temperature
103
7
5
3
2
Distribution
T2+, G–
Typical Example
102
7
5
3
2
101
7
5
3
2
TT22+–,,
G+
G–
Typical Example
100
–40
0
40 80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140 Tj = 125°C
120
100 III Quadrant
80
60
I Quadrant
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
102
7
5
3
2
Main Voltage
(dv/dt)c
Main Current
IT
τ
Time
VD
(di/dt)c
Time
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
101
7
Minimum
Characteristics
5 Value
III Quadrant
3
2
100
7
3
5 7 101
23
I Quadrant
5 7 102 2 3
Rate of Decay of On-State
Commutating Current (A/ms)
Preliminary
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
140 Tj = 150°C
120
100
80 III Quadrant
60
40
I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=150°C)
7
Main Voltage
(dv/dt)c
5 Main Current
IT
3τ
2
Time
VD
(di/dt)c
Time
Typical Example
Tj = 150°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
101
7 I Quadrant
5
3
2 Minimum
Characteristics
Value
100
7
3 5 7 101
III Quadrant
2 3 5 7 102
23
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0226EJ0100 Rev.1.00
Dec 14, 2010
Page 5 of 7
5 Page | ||
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| PDF Descargar | [ Datasheet BCR16CS-16LB.PDF ] | |
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