NP50P04SLG PDF даташит
Спецификация NP50P04SLG изготовлена «Renesas» и имеет функцию, называемую «MOS FIELD EFFECT TRANSISTOR». |
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Детали детали
Номер произв | NP50P04SLG |
Описание | MOS FIELD EFFECT TRANSISTOR |
Производители | Renesas |
логотип |
8 Pages
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NP50P04SLG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0241EJ0100
Rev.1.00
Feb 09, 2011
Description
The NP50P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Super low on-state resistance
⎯ RDS(on)1 = 9.6 mΩ MAX. (VGS = −10 V, ID = −25 A)
⎯ RDS(on)2 = 15 mΩ MAX. (VGS = −4.5 V, ID = −25 A)
• Low input capacitance
• Gate to Source ESD protection diode built-in
Ordering Information
Part No.
LEAD PLATING
PACKING
NP50P04SLG-E1-AY ∗1
NP50P04SLG-E2-AY ∗1
Pure Sn (Tin)
Tape 2500 p/reel
Note: ∗1. Pb-free (This product does not contain Pb in external electrode.)
Package
TO-252 (MP-3ZK)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ∗2
Single Avalanche Energy ∗2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
−40
m20
m50
m150
84
1.2
175
−55 to +175
37
136
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-C)
Rth(ch-A)
1.78 °C/W
125 °C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Starting Tch = 25°C, VDD = −20 V, RG = 25 Ω, VGS = −20 → 0 V
R07DS0241EJ0100 Rev.1.00
Feb 09, 2011
Page 1 of 6
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NP50P04SLG
Electrical Characteristics (TA = 25°C)
Item
Symbol Min
Zero Gate Voltage Drain Current IDSS
Gate Leakage Current
IGSS
Gate to Source Threshold
VGS(th)
−1.0
Voltage
Forward Transfer Admittance ∗1 | yfs |
12
Drain to Source On-state
Resistance ∗1
RDS(on)1
RDS(on)2
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
Gate to Source Charge
QGS
Gate to Drain Charge
Body Diode Forward Voltage ∗1
QGD
VF(S-D)
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Note: ∗1. Pulsed test PW ≤ 350 μs, Duty Cycle ≤ 2%
Typ
−1.4
44
8.2
9.8
3800
740
500
11
15
250
150
100
13
30
0.96
50
63
Max
−1
m10
−2.5
9.6
15
5700
1120
905
24
39
505
380
150
1.5
Chapter Title
Unit
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
VDS = −40 V, VGS = 0 V
VGS = m20 V, VDS = 0 V
VDS = VGS, ID = −250 μA
VDS = −10 V, ID = −25 A
VGS = −10 V, ID = −25 A
VGS = −4.5 V, ID = −25 A
VDS = −10 V,
VGS = 0 V,
f = 1 MHz
VDD = −20 V, ID = −25 A,
VGS = −10 V,
RG = 0 Ω
VDD = −32 V,
VGS = −10 V,
ID = −50 A
IF = −50 A, VGS = 0 V
IF = −50 A, VGS = 0 V,
di/dt = −100 A/μs
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
L
PG.
VGS = −20 → 0 V
50 Ω
VDD
− IAS BVDSS
VDS
ID
VDD
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS(−)
0
τ
τ = 1 μs
Duty Cycle ≤ 1%
RL
VDD
VGS(−)
VGS
Wave Form
0 10%
VDS(−)
90%
VDS
VDS
Wave Form 0
td(on)
VGS 90%
90%
10% 10%
tr td(off)
tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = −2 mA
PG. 50 Ω
RL
VDD
R07DS0241EJ0100 Rev.1.00
Feb 09, 2011
Page 2 of 6
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NP50P04SLG
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
Tch - Channel Temperature - °C
Chapter Title
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-1000
-100
-10
RD(VS(oGnS) =Li−m1iit0edV)
ID(DC)
ID(pulse)
DC
Power Dissipation
Limited
PW = 100 μs
1 ms
-1 10 ms
-0.1
TC = 25°C
Single Pulse
-0.1
-1
-10 -100
VDS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125°C/W
10
Rth(ch-C) = 1.78°C/W
1
0.1
0.01100 μ
1m
10 m 100 m
1
10
PW - Pulse Width - s
Single Pulse
100 1000
R07DS0241EJ0100 Rev.1.00
Feb 09, 2011
Page 3 of 6
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