SDB310WAF PDF даташит
Спецификация SDB310WAF изготовлена «KODENSHI» и имеет функцию, называемую «General Purpose Schottky Barrier Diode». |
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Детали детали
Номер произв | SDB310WAF |
Описание | General Purpose Schottky Barrier Diode |
Производители | KODENSHI |
логотип |
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SDB310WAF
SCHOTTKY BARRIER DIODE
General Purpose Schottky Barrier Diode
General Description
These Schottky barrier diodes are designed for high-speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conductions. Miniature
surface mount package is excellent for hand-held and portable
applications where space is limited.
Features and Benefits
Low forward drop voltage and low leakage current
Very low switching time
Full lead (Pb)-free device and RoHS compliant device
Available in “Green” device
SOT-23F
Applications
General purpose and high speed switching
Protection circuit and voltage clamping
Ordering Information
Part Number
Marking Code
Package
Packaging
SDB310WAF
DB2 □
SOT-23F
Tape & Reel
Marking Information
DB2 □
DB2 = Specific Device Code
□ = Year & Week Code Marking
Pinning Information
Pin Description
1 Cathode (Diode 1)
2 Cathode (Diode 2)
3 Common Anode
Simplified Outline
Rev. date: 25-AUG-10
KSD-D5C040-001
Graphic Symbol
www.auk.co.kr
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Absolute Maximum Ratings (Tamb=25℃, Unless otherwise specified)
Characteristic
Symbol
Peak reverse voltage
DC reverse voltage
Repetitive peak forward current
Forward current
Non-repetitive peak forward surge current(t=10ms)
Power dissipation 1)
1) Device mounted on FR-4 board with recommended pad layout.
VRM
VR
IFRM
IF
IFSM
PD
SDB310WAF
Ratings
40
30
0.5
0.2
2
150
Unit
V
V
A
A
A
mW
Thermal Characteristics (Tamb=25℃, Unless otherwise specified)
Characteristic
Symbol
Thermal resistance, junction to ambient 1)
Operating junction temperature
Storage temperature range
1) Device mounted on FR-4 board with recommended pad layout.
Rth(j-a)
Tj
Tstg
Ratings
833
150
-55 ~ 150
Unit
C/W
C
C
Electrical Characteristics (Tamb=25℃, Unless otherwise specified)
Characteristic
Symbol
Test Condition
Forward voltage 2)
Reverse leakage current 3)
Total capacitance
Reverse recovery time
VF(1)
VF(2)
IR
CT
trr
IF=10mA
IF=30mA
VR=30V
VR=1V, f=1MHz
IF= IR=10mA, IR(REC)= 1mA
2) Pulse test: tP≤380㎲, Duty cycle≤2%
3) Pulse test: tP≤5㎳, Duty cycle≤2%
Min. Typ. Max.
- - 0.4
- - 0.5
-- 1
- - 10
-- 5
Unit
V
V
A
pF
ns
Rev. date: 25-AUG-10
KSD-D5C040-001
www.auk.co.kr
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Rating and Characteristic Curves
Fig. 1) Typical Forward Characteristics
SDB310WAF
Fig. 2) Typical Reverse Characteristics
Fig. 3) Typical Total Capacitance Characteristics
Fig. 4) Power dissipation vs. Ambient temperature
Fig. 5) Reverse recovery time equivalent test circuit
Rev. date: 25-AUG-10
KSD-D5C040-001
www.auk.co.kr
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Номер в каталоге | Описание | Производители |
SDB310WA | General Purpose Schottky Barrier Diode | KODENSHI |
SDB310WA | Schottky Barrier Diode | AUK |
SDB310WAF | Schottky Barrier Diode | AUK |
SDB310WAF | General Purpose Schottky Barrier Diode | KODENSHI |
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