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SD103AWS PDF даташит

Спецификация SD103AWS изготовлена ​​​​«Vishay» и имеет функцию, называемую «Small Signal Schottky Diodes».

Детали детали

Номер произв SD103AWS
Описание Small Signal Schottky Diodes
Производители Vishay
логотип Vishay логотип 

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SD103AWS Даташит, Описание, Даташиты
www.vishay.com
SD103AWS, SD103BWS, SD103CWS
Vishay Semiconductors
Small Signal Schottky Diodes
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
18/10K per 13” reel (8 mm tape), 10K/box
08/3K per 7” reel (8 mm tape), 15K/box
FEATURES
• The SD103 series is a metal-on-silicon
Schottky barrier device which is protected by
a PN junction guard ring
• The low forward voltage drop and fast
switching make it ideal for protection of MOS
devices, steering, biasing, and coupling
diodes for fast switching and low logic level
applications
• For general purpose applications
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
PART
SD103AWS
SD103BWS
SD103CWS
ORDERING CODE
SD103AWS-E3-08 or SD103AWS-E3-18
SD103AWS-HE3-08 or SD103AWS-HE3-18
SD103BWS-E3-08 or SD103BWS-E3-18
SD103BWS-HE3-08 or SD103BWS-HE3-18
SD103CWS-E3-08 or SD103CWS-E3-18
SD103CWS-HE3-08 or SD103CWS-HE3-18
INTERNAL
CONSTRUCTION
Single diode
Single diode
Single diode
TYPE MARKING
S6
S7
S8
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
Repetitive peak reverse voltage
Forward continuous current (1)
Power dissipation (1)
Single cycle surge
10 μs square wave
SD103AWS
SD103BWS
SD103CWS
VRRM
VRRM
VRRM
IF
Ptot
IFS;M
Note
(1) Valid provided that electrodes are kept at ambient temperature
VALUE
40
30
20
350
200
2
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
RthJA
Junction temperature
Tj
Operating temperature range
Top
Storage temperature range
Tstg
Note
(1) Valid provided that electrodes are kept at ambient temperature
VALUE
500
125
- 55 to + 125
- 55 to + 150
UNIT
V
V
V
mA
mW
A
UNIT
K/W
°C
°C
°C
Rev. 1.9, 25-Feb-13
1 Document Number: 85682
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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SD103AWS Даташит, Описание, Даташиты
www.vishay.com
SD103AWS, SD103BWS, SD103CWS
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
Leakage current
Forward voltage drop
Diode capacitance
Reverse recovery time
VR = 30 V
VR = 20 V
VR = 10 V
IF = 20 mA
IF = 200 mA
VR = 0 V, f = 1 MHz
IF = IR = 50 mA to 200 mA,
recover to 0.1 IR
SD103AWS
SD103BWS
SD103CWS
IR
IR
IR
VF
VF
CD
trr
TYP.
50
10
MAX.
5
5
5
370
600
UNIT
μA
μA
μA
mV
mV
pF
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
1000
100 100
10 10
11
Tamb = 125 °C
100 °C
75 °C
50 °C
25 °C
0.1 0.1
0.01
0 0.2 0.4 0.6 0.8 1.0
18488
VF - Forward Voltage (V)
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage
0.01
0 5 10 15 20 25 30 35 40 45 50
20084
VR - Reverse Voltage (V)
Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
5
4 tp = 300 ms
duty cycle = 2 %
3
2
100
10
1
0
0
18489
0.5 1.0
VF - Forward Voltage (V)
1.5
Fig. 2 - Typical High Current Forward Conduction Curve
1
0 10 20 30 40 50
18491
VR - Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Rev. 1.9, 25-Feb-13
2 Document Number: 85682
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









No Preview Available !

SD103AWS Даташит, Описание, Даташиты
www.vishay.com
SD103AWS, SD103BWS, SD103CWS
Vishay Semiconductors
50
40
30
I F = 400 mA
20
100 mA
200 mA
10
0
0
18492
100 200
Tamb - Ambient Temperature (°C)
Fig. 5 - Blocking Voltage Deration vs. Temperature at Various
Average Forward Currents
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
0.40 (0.016)
0.25 (0.010)
Cathode bar
1.95 (0.077)
1.60 (0.063)
2.85 (0.112)
2.50 (0.098)
Foot print recommendation:
0.6 (0.024)
Document no.:S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 5 - Date: 23.Sept.2009
17443
1.6 (0.063)
0.6 (0.024)
Rev. 1.9, 25-Feb-13
3 Document Number: 85682
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










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