NSTR4501N PDF даташит
Спецификация NSTR4501N изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NSTR4501N |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
5 Pages
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NTR4501N, NSTR4501N
Power MOSFET
20 V, 3.2 A, Single N−Channel, SOT−23
Features
• Leading Planar Technology for Low Gate Charge / Fast Switching
• 2.5 V Rated for Low Voltage Gate Drive
• SOT−23 Surface Mount for Small Footprint
• NSTR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Load/Power Switch for Portables
• Load/Power Switch for Computing
• DC−DC Conversion
MAXIMUM RATINGS (TJ= 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady State Power
Dissipation (Note 1)
Steady
State
TA = 25°C
TA = 85°C
Steady State
VDSS
VGS
ID
PD
20
±12
3.2
2.4
1.25
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM 10.0
TJ, −55 to
Tstg 150
IS 1.6
TL 260
Unit
V
V
A
A
W
A
°C
A
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient (Note 1)
RqJA
100 °C/W
Junction−to−Ambient (Note 2)
RqJA
300
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
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V(BR)DSS
20 V
RDS(on) Typ
70 mW @ 4.5 V
88 mW @ 2.5 V
ID Max
(Note 1)
3.6 A
3.1 A
N−Channel
D
G
S
3
1
2
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain
3
TR1 M G
G
1
Gate
2
Source
TR1 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NTR4501NT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
NSTR4501NT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 12
1
Publication Order Number:
NTR4501N/D
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NTR4501N, NSTR4501N
Electrical Characteristics (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
IDSS
IGSS
VGS = 0 V
TJ = 25°C
VDS = 16 V TJ = 85°C
VDS = 0 V, VGS = ±12 V
Gate Threshold Voltage (Note 3)
Negative Threshold
Temperature Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = 4.5 V, ID = 3.6 A
VGS = 2.5 V, ID = 3.1 A
VDS = 5.0 V, ID = 3.6 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 4)
Ciss
Coss
Crss
QG(TOT)
QGS
QGD
VGS = 0 V, f = 1.0 MHz,
VDS = 10 V
VGS = 4.5 V, VDS = 10 V,
ID = 3.6 A
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
SOURCE−DRAIN DIODE CHARACTERISTICS
td(on)
tr
td(off)
tf
VGS = 4.5 V, VDS = 10 V,
ID = 3.6 A, RG = 6.0 W
Forward Diode Voltage
VSD VGS = 0 V, ISD = 1.6 A
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta
tb
VGS = 0 V,
dIS/dt = 100 A/ms,
IS = 1.6 A
Reverse Recovery Charge
QRR
3. Pulse Test: Pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
20
0.65
Typ
24.5
22
−2.3
70
88
9
200
80
50
2.4
0.5
0.6
6.5
12
12
3
0.8
7.1
5
1.9
3.0
Max Units
1.5
10
±100
V
mV/°C
mA
mA
nA
1.2 V
mV/°C
80
105 mW
S
pF
6.0
nC
13
24
ns
24
6
1.2 V
ns
nC
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NTR4501N, NSTR4501N
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
VGS = 10 V
VGS = 2.2 V
VGS = 3.0 V
VGS = 2.0 V TJ = 25°C
VGS = 1.8 V
VGS = 1.6 V
VGS = 1.4 V
VGS = 1.2 V
123456789
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
10
8
VDS ≥ 10 V
7
6
5
4
3
2
1
0
0.5
TJ = 125°C
TJ = 25°C
TJ = −55°C
1.0 1.5 2.0
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.5
0.25
0.20
0.15
0.10
ID = 3.2 A
TJ = 25°C
0.10
TJ = 25°C
0.09
0.08
0.07
0.06
VGS = 2.5 V
VGS = 4.5 V
0.05 1
234
5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
6
1.4
ID = 3.2 A
VGS = 4.5 V
1.2
1.0
0.8
0.05
2
3 45
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
6
1000
VGS = 0 V
100
TJ = 150°C
10
TJ = 100°C
0.6
−50 −25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1.0 2
4 6 8 10 12 14 16 18 20
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage
Current versus Voltage
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NSTR4501N | Power MOSFET ( Transistor ) | ON Semiconductor |
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