NGTG50N60FWG PDF даташит
Спецификация NGTG50N60FWG изготовлена «ON Semiconductor» и имеет функцию, называемую «IGBT ( Insulated Gate Bipolar Transistor )». |
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Детали детали
Номер произв | NGTG50N60FWG |
Описание | IGBT ( Insulated Gate Bipolar Transistor ) |
Производители | ON Semiconductor |
логотип |
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NGTG50N60FWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss.
Features
• Optimized for Very Low VCEsat
• Low Switching Loss Reduces System Power Dissipation
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
Typical Applications
• Solar Inverters
• Uninterruptible Power Supples (UPS)
• Motor Drives
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES 600 V
IC A
100
50
Pulsed collector current, Tpulse
limited by TJmax
Short−circuit withstand time
VGE = 15 V, VCE = 300 V,
TJ ≤ +150°C
Gate−emitter voltage
Transient Gate−Emitter Voltage
ICM 200 A
tSC 5 ms
VGE
$20
V
$30
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD W
223
89
Operating junction temperature
range
TJ −55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
50 A, 600 V
VCEsat = 1.50 V
C
G
E
G
C
E
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
G50N60F
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTG50N60FWG
Package Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2012
December, 2012 − Rev. 0
1
Publication Order Number:
NGTG50N60FW/D
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NGTG50N60FWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−ambient
Symbol
RqJC
RqJA
Value
0.56
40
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 500 mA
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−
emitter short−circuited
Gate leakage current, collector−emitter
short−circuited
VGE = 15 V, IC = 50 A
VGE = 15 V, IC = 50 A, TJ = 150°C
VGE = VCE, IC = 350 mA
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150°C
VGE = 20 V , VCE = 0 V
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 480 V, IC = 50 A, VGE = 15 V
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
VCC
=
T4J00=
25°C
V, IC =
50
A
Rg = 10 W
VGE = 0 V/ 15 V*
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
VCC
=T4J0=0
150°C
V, IC =
50
A
Rg = 10 W
VGE = 0 V/ 15 V*
Turn−off switching loss
Total switching loss
*Includes diode reverse recovery loss using NGTB50N60FWG.
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Min
600
1.25
−
4.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ
−
1.45
1.7
5.5
−
−
−
7300
195
170
310
60
150
117
43
285
105
1.1
1.2
2.3
112
45
300
214
1.4
2.0
3.4
Max
−
1.7
−
6.5
0.5
2
200
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
V
V
V
mA
nA
pF
nC
ns
mJ
ns
mJ
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NGTG50N60FWG
TYPICAL CHARACTERISTICS
250
TJ = 25°C
200
VGE = 17 V to 13 V
150
11 V
250
TJ = 150°C
200
150
VGE = 17 V to 13 V
11 V
100
50
0
0
10 V
9V
7V 8V
12 3 456 7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
8
100
50
0
0
10 V
9V
8V
7V
1 2 3 4 5 6 78
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. Output Characteristics
250
VGE = 17 V to 13 V
200
150
100
TJ = −40°C
11 V
10 V
50
9V
0 7 V to 8 V
0 1 2 3 4 5 6 78
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
200
180
160
140
120
100
80
60
40
20
00
TJ = 25°C
TJ = 150°C
4 8 12
VGE, GATE−EMITTER VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
16
3.0
2.5
2.0
1.5
1.0
0.5
0
−75
IC = 100 A
IC = 50 A
IC = 10 A
IC = 5 A
10000
1000
100
Cies
Coes
Cres
−25 25
75 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. VCE(sat) vs. TJ
10
175 0 10 20 30 40 50 60 70 80 90 100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 6. Typical Capacitance
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NGTG50N60FWG | IGBT ( Insulated Gate Bipolar Transistor ) | ON Semiconductor |
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