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SDB30D100D2 PDF даташит

Спецификация SDB30D100D2 изготовлена ​​​​«KODENSHI» и имеет функцию, называемую «HIGH VOLTAGE SCHOTTKY RECTIFIER».

Детали детали

Номер произв SDB30D100D2
Описание HIGH VOLTAGE SCHOTTKY RECTIFIER
Производители KODENSHI
логотип KODENSHI логотип 

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SDB30D100D2 Даташит, Описание, Даташиты
HIGH VOLTAGE SCHOTTKY RECTIFIER
SDB30D100D2
Schottky Barrier Rectifier
Features
Low forward voltage drop and leakage current
Low power loss and High efficiency
Guard-ring for overvoltage protection
Dual common cathode rectifier
Full lead (Pb)-free and RoHS compliant device
2
13
4
1 2, 4 3
Pin 1, 3: Anode
Pin 2, 4: Cathode
Applications
Power supply - Output rectification
High efficiency SMPS
D2-PAK
Product Characteristics
Free-wheeling diode
IF(AV)
2 X 15A
Reverse battery protection
DC to DC systems
VRRM
VFM at 125
100V
0.72V
Description
IFSM 210A
Schottky barrier rectifier designed for high frequency miniature Switched Mode Power Supplies such as
adaptors and on board DC to DC converters.
Ordering Information
Device
Marking Code
Package
Packaging
SDB30D100D2
SDB30D100D2
D2-PAK
Tape & Reel
Marking Information
AUK
Δ YMDD
SDB30D100D2
AUK = Manufacture Logo
Δ = Control Code of Manufacture
YMDD = Date Code Marking
-. Y = Year Code
-. M = Monthly Code
-. DD = Daily Code
SDB30D100D2 = Specific Device Code
KSD-D6S019-000
1









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SDB30D100D2 Даташит, Описание, Даташиты
Absolute Maximum Ratings (Limiting Values)
Characteristic
Maximum repetitive reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
per diode
total device
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
Storage temperature range
Maximum operating junction temperature
SDB30D100D2
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
Tstg
TJ
Value
100
15
30
210
-45 to +150
150
Unit
V
A
A
Thermal Characteristics
Characteristic
Maximum thermal resistance junction to case
per diode
total device
Symbol
Rth(j-c)
Value
3.5
3.3
Unit
/W
Electrical Characteristics (Per Diode)
Characteristic
Symbol
Peak forward voltage drop
VFM (1)
Reverse leakage current
IRM (1)
Junction capacitance
Cj
Note : (1) Pulse test : tP380us, Duty cycle2%
Test Condition
IFM = 15A
VR = VRRM
Tj=25
Tj=125
Tj=25
Tj=125
VR = 5VDC, f=1MHz
Min.
-
-
-
-
-
Typ.
-
-
-
-
280
Max.
0.85
0.72
0.2
30
-
Unit
V
mA
pF
KSD-D6S019-000
2









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SDB30D100D2 Даташит, Описание, Даташиты
Rating and Characteristic Curves
Fig. 1) Typical Forward Characteristics (Per diode)
SDB30D100D2
Fig. 2) Typical Reverse Characteristics (Per diode)
Fig. 3) Maximum Forward Derative Curve
Fig. 4) Forward Power Dissipation (Per diode)
Fig. 5) Maximum Non-Repetitive Peak Forward
Surge Current (Per diode)
Fig. 6) Typical Junction Capacitance (Per diode)
KSD-D6S019-000
3










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Номер в каталогеОписаниеПроизводители
SDB30D100D2HIGH VOLTAGE SCHOTTKY RECTIFIERKODENSHI
KODENSHI

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