DataSheet26.com

W13NK80Z PDF даташит

Спецификация W13NK80Z изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую «STW13NK80Z».

Детали детали

Номер произв W13NK80Z
Описание STW13NK80Z
Производители STMicroelectronics
логотип STMicroelectronics логотип 

14 Pages
scroll

No Preview Available !

W13NK80Z Даташит, Описание, Даташиты
STW13NK80Z
N-channel 800V - 0.53- 12A - TO-247
Zener-protected SuperMESH™ Power MOSFET
General features
Type
STW13NK80Z
VDSS
800V
RDS(on)
<0.65
ID pW
12A 230W
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
t(s)Very good manufacturing repeatibility
ucDescription
rodThe SuperMESH™ series is obtained through an
Pextreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
tepushing on-resistance significantly down, special
lecare is taken to ensure a very good dv/dt
ocapability for the most demanding applications.
bsSuch series complements ST full range of high
voltage MOSFETs including revolutionary
- OMDmesh™ products.
t(s)Applications
ucSwitching application
TO-247
Internal schematic diagram
te ProdOrder codes
olePart number
ObsSTW13NK80Z
Marking
W13NK80Z
Package
TO-247
Packaging
Tube
October 2006
Rev 4
1/14
www.st.com
14









No Preview Available !

W13NK80Z Даташит, Описание, Даташиты
Contents
Contents
STW13NK80Z
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Obsolete Product(s) - Obsolete Product(s)5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14









No Preview Available !

W13NK80Z Даташит, Описание, Даташиты
STW13NK80Z
1 Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS Drain-source voltage (VGS = 0)
800 V
VGS Gate- source voltage
± 30 V
ID Drain current (continuous) at TC = 25°C 12 A
ID
IDM(1)
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
7.6
48
A
A
Ptot Total dissipation at TC = 25°C
230 W
Derating Factor
1.85 W/°C
EAS (2)
Single pulse avalanche energy
)Tstg Storage temperature
t(sTj Max. operating junction temperature
uc1. Pulse width limited by safe operating area.
d2. ISD 12A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.
4.5
-55 to 150
mJ
°C
ProTable 2. Thermal data
teRthj-case Thermal resistance junction-case max
leRthj-amb Thermal resistance junction-ambient max
bsoTJ Maximum lead temperature for soldering purpose
0.54 °C/W
50 °C/W
300 °C
- OTable 3. Avalanche characteristics
t(s)Symbol
Parameter
cAvalanche current, repetitive or not-repetitive
duIAR (pulse width limited by Tj max)
roSingle pulse avalanche energy
PEAS (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max value
12
450
Unit
A
mJ
leteTable 4. Gate-source zener diode
so Symbol
Parameter
Test conditions
Ob BVGSO
Gate-source breakdown
voltage
Igs=± 1mA (open drain)
Min. Typ. Max. Unit
30 V
3/14










Скачать PDF:

[ W13NK80Z.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
W13NK80ZSTW13NK80ZSTMicroelectronics
STMicroelectronics

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск