W13NK80Z PDF даташит
Спецификация W13NK80Z изготовлена «STMicroelectronics» и имеет функцию, называемую «STW13NK80Z». |
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Детали детали
Номер произв | W13NK80Z |
Описание | STW13NK80Z |
Производители | STMicroelectronics |
логотип |
14 Pages
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STW13NK80Z
N-channel 800V - 0.53Ω - 12A - TO-247
Zener-protected SuperMESH™ Power MOSFET
General features
Type
STW13NK80Z
VDSS
800V
RDS(on)
<0.65Ω
ID pW
12A 230W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
t(s)■ Very good manufacturing repeatibility
ucDescription
rodThe SuperMESH™ series is obtained through an
Pextreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
tepushing on-resistance significantly down, special
lecare is taken to ensure a very good dv/dt
ocapability for the most demanding applications.
bsSuch series complements ST full range of high
voltage MOSFETs including revolutionary
- OMDmesh™ products.
t(s)Applications
uc■ Switching application
TO-247
Internal schematic diagram
te ProdOrder codes
olePart number
ObsSTW13NK80Z
Marking
W13NK80Z
Package
TO-247
Packaging
Tube
October 2006
Rev 4
1/14
www.st.com
14
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Contents
Contents
STW13NK80Z
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Obsolete Product(s) - Obsolete Product(s)5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
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STW13NK80Z
1 Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS Drain-source voltage (VGS = 0)
800 V
VGS Gate- source voltage
± 30 V
ID Drain current (continuous) at TC = 25°C 12 A
ID
IDM(1)
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
7.6
48
A
A
Ptot Total dissipation at TC = 25°C
230 W
Derating Factor
1.85 W/°C
EAS (2)
Single pulse avalanche energy
)Tstg Storage temperature
t(sTj Max. operating junction temperature
uc1. Pulse width limited by safe operating area.
d2. ISD ≤12A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.
4.5
-55 to 150
mJ
°C
ProTable 2. Thermal data
teRthj-case Thermal resistance junction-case max
leRthj-amb Thermal resistance junction-ambient max
bsoTJ Maximum lead temperature for soldering purpose
0.54 °C/W
50 °C/W
300 °C
- OTable 3. Avalanche characteristics
t(s)Symbol
Parameter
cAvalanche current, repetitive or not-repetitive
duIAR (pulse width limited by Tj max)
roSingle pulse avalanche energy
PEAS (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max value
12
450
Unit
A
mJ
leteTable 4. Gate-source zener diode
so Symbol
Parameter
Test conditions
Ob BVGSO
Gate-source breakdown
voltage
Igs=± 1mA (open drain)
Min. Typ. Max. Unit
30 V
3/14
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W13NK80Z | STW13NK80Z | STMicroelectronics |
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