NSBC143TDXV6 PDF даташит
Спецификация NSBC143TDXV6 изготовлена «ON Semiconductor» и имеет функцию, называемую «Dual NPN Bias Resistor Transistors». |
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Детали детали
Номер произв | NSBC143TDXV6 |
Описание | Dual NPN Bias Resistor Transistors |
Производители | ON Semiconductor |
логотип |
6 Pages
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MUN5216DW1,
NSBC143TDXV6
Dual NPN Bias Resistor
Transistors
R1 = 4.7 kW, R2 = 8 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
• S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Rating
Symbol
Max
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
30
Vdc
Input Reverse Voltage
VIN(rev)
6
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping†
MUN5216DW1T1G,
SMUN5216DW1T1G
SOT−363
3,000 / Tape & Reel
NSBC143TDXV6T1G
SOT−563
4,000 / Tape & Reel
NSBC143TDXV6T5G
SOT−563
8,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
PIN CONNECTIONS
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MARKING DIAGRAMS
6
7F M G
G
1
SOT−363
CASE 419B
7F M G
1G
SOT−563
CASE 463A
7F = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
Publication Order Number:
DTC143TD/D
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MUN5216DW1, NSBC143TDXV6
THERMAL CHARACTERISTICS
Characteristic
Symbol
MUN5216DW1 (SOT−363) One Junction Heated
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
MUN5216DW1 (SOT−363) Both Junction Heated (Note 3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
RqJL
Junction and Storage Temperature Range
NSBC143TDXV6 (SOT−563) One Junction Heated
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 1)
(Note 1)
TJ, Tstg
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
NSBC143TDXV6 (SOT−563) Both Junction Heated (Note 3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 1)
(Note 1)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
TJ, Tstg
Max Unit
187 mW
256
1.5 mW/°C
2.0
670 °C/W
490
250
385
2.0
3.0
493
325
188
208
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
357 mW
2.9 mW/°C
°C/W
350
500
4.0
250
−55 to +150
mW
mW/°C
°C/W
°C
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MUN5216DW1, NSBC143TDXV6
ELECTRICAL CHARACTERISTICS (TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
−
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
−
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
Collector−Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = 5.0 mA, VCE = 10 V)
hFE
160
Collector−Emitter Saturation Voltage (Note 4)
(IC = 10 mA, IB = 1.0 mA)
VCE(sat)
−
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
−
Input Voltage (on)
(VCE = 0.2 V, IC = 10 mA)
Vi(on)
−
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
−
Output Voltage (off)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
VOH
4.9
Input Resistor
R1 3.3
Resistor Ratio
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
R1/R2
−
Typ
−
−
−
−
−
350
−
0.6
0.9
−
−
4.7
−
Max
100
500
1.9
−
−
−
0.25
−
−
0.2
−
6.1
−
Unit
nAdc
nAdc
mAdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
kW
400
350
300
(1) SOT−363; 1.0 x 1.0 inch Pad
250 (2) SOT−563; Minimum Pad
200
(1) (2)
150
100
50
0
−50 −25
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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NSBC143TDXV6 | Dual NPN Bias Resistor Transistors | ON Semiconductor |
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