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C5812 PDF даташит

Спецификация C5812 изготовлена ​​​​«Hitachi Semiconductor» и имеет функцию, называемую «NPN Transistor - 2SC5812».

Детали детали

Номер произв C5812
Описание NPN Transistor - 2SC5812
Производители Hitachi Semiconductor
логотип Hitachi Semiconductor логотип 

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C5812 Даташит, Описание, Даташиты
2SC5812
Silicon NPN Epitaxial
VHF/UHF wide band amplifier
ADE-208-1468(Z)
Rev.0
Nov. 2001
Features
High power gain, Low noise figure at low power operation:
|S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)
Outline
MFPAK
Note: Marking is “WG–“.
3
1
2
1. Emitter
2. Base
3. Collector









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C5812 Даташит, Описание, Даташиты
2SC5812
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
15
4
1.5
50
80
150
55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to base breakdown V(BR)CBO 15   V
voltage
IC = 10 µA, IE = 0
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Reverse transfer capacitance
ICBO
ICEO
IEBO
hFE
Cre
  0.1 µA
1
µA
  0.1 µA
100 120 150
0.2 pF
VCB = 15 V, IE = 0
VCE = 4 V, RBE = Infinite
VEB = 0.8 V, IC = 0
VCE = 1 V, IC = 5 mA
VCE = 1 V, Emitter ground,
f = 1 MHz
Collector output capacitance Cob
0.4 0.7 pF
VCB = 1 V, IE = 0,
f = 1 MHz
Gain bandwidth product
Gain bandwidth product
Forward transmission
coefficient
fT(1)
8
11 GHz VCE = 1V, IC = 5 mA
fT(2)
15
GHz VCE = 1V, IC = 20 mA
|S21|2
14
17
dB VCE = 1 V, IC = 5 mA,
f = 900 MHz
Noise figure
NF 1.0 1.7 dB VCE = 1 V, IC = 5 mA,
f = 900 MHz,
ΓS = ΓL = 50
Rev.0, Nov. 2001, page 2 of 10









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C5812 Даташит, Описание, Даташиты
Collector Power Dissipation Curve
100
80
60
40
20
0 50 100 150 200 250
Ambient Temperature Ta (˚C)
2SC5812
Typical Output Characteristics
20
160 µA
140 µA
15 120 µA
100 µA
80 µA
10
60 µA
40 µA
5
IB = 20 µA
0 1 2 34
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
25
VCE = 1 V
20
15
10
5
0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage VBE (V)
DC Current Transfer Ratio vs.
Collector Current
200
VCE = 1 V
100
0
0.1 1.0 10 100
Collector Current IC (mA)
Rev.0, Nov. 2001, page 3 of 10










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