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NT5CB128M8DN PDF даташит

Спецификация NT5CB128M8DN изготовлена ​​​​«Nanya» и имеет функцию, называемую «1Gb DDR3 SDRAM».

Детали детали

Номер произв NT5CB128M8DN
Описание 1Gb DDR3 SDRAM
Производители Nanya
логотип Nanya логотип 

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NT5CB128M8DN Даташит, Описание, Даташиты
1Gb DDR3 SDRAM
NT5CB128M8DN / NT5CB64M16DP
NT5CC128M8DN / NT5CC64M16DP
Feature
1.5V ± 0.075V & 1.35V -0.067/+0.1V
(JEDEC Standard Power Supply)
VDD= VDDQ= 1.35V (1.283~1.45V )
Backward compatible to VDD= VDDQ= 1.5V
±0.075V
Supports DDR3L devices to be backward
compatible in 1.5V applications
The timing specification of high speed bin is
backward compatible with low speed bin
8 Internal memory banks (BA0- BA2)
Differential clock input (CK, )
Programmable Latency: 5, 6, 7, 8, 9,
10, 11, 12, 13, (14)
POSTED CAS ADDITIVE Programmable Additive
Latency: 0, CL-1, CL-2
Programmable Sequential / Interleave Burst Type
Programmable Burst Length: 4, 8
8n-bit prefetch architecture
Output Driver Impedance Control
Differential bidirectional data strobe
Write Leveling
OCD Calibration
Dynamic ODT (Rtt_Nom & Rtt_WR)
Auto Self-Refresh
Self-Refresh Temperature
RoHS Compliance
Lead-Free and Halogen-Free
Packages:
78-Ball BGA for x8 components
96-Ball BGA for x16 components
Operation Temperture
Commerical grade (0℃≦TC95)
- BE, CF, DH, EJ, FK
Industial grade (-40℃≦TC95)
- CFI, DHI
DCC Version 1.1
01/ 2014
1
© NANYA TECHNOLOGY CORP.
All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.









No Preview Available !

NT5CB128M8DN Даташит, Описание, Даташиты
1Gb DDR3 SDRAM
NT5CB128M8DN / NT5CB64M16DP
NT5CC128M8DN / NT5CC64M16DP
Table 1: CAS Latency Frequency
-BE*
-CF/CFI*
Speed Bins
DDR3/L-1066
DDR3/L-1333
CL7 CL8
Parameter
Clock
Frequency
Min.
300
Max.
Min. Max.
533 300 667
tRCD
13.125
-
12 -
tRP
13.125
-
12 -
tRC
50.625
-
48 -
tRAS
37.5 70K 36 70K
tCK(Avg.)@CL5
3
3.3 2.5 3.3
tCK(Avg.)@CL6
2.5
3.3 2.5 3.3
tCK(Avg.)@CL7 1.875
2.5 1.875 2.5
tCK(Avg.)@CL8 1.875
2.5
1.5 2.5
tCK(Avg.)@CL9
tCK(Avg.)@CL10
-
-
- 1.5 1.875
- 1.5 1.875
tCK(Avg.)@CL11
-
- --
tCK(Avg.)@CL12
-
- --
tCK(Avg.)@CL13
tCK(Avg.)@CL14
-
- --
-DH/DHI*
DDR3/L-1600
CL10
Min.
Max.
300 800
12.5
12.5
47.5
35
2.5
2.5
1.875
1.5
1.5
1.25
1.25
-
-
-
-
-
70K
3.3
3.3
2.5
2.5
1.875
1.875
1.5
-
-
-EJ*
DDR3-1866
CL12
Min. Max.
-FK*
DDR3-2133
CL13
Units
Min. Max. tCK(Avg.)
300 933 300 1066
MHz
12.84
- 12.155 -
12.84
- 12.155 -
46.84
34
2.5
- 45.155 -
70K 33 70K
3.3 2.5 3.3
2.5 3.3 2.5 3.3
1.875 2.5 1.875 2.5
1.875 2.5 1.875 2.5
1.5 1.875 1.5 1.875
1.5 1.875 1.25 1.875
1.25 1.5 1.25 1.5
1.07
1.25
1.07
1.25
1.07
1.25
0.938
0.938
1.25
1.07
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
*The timing specification of high speed bin is backward compatible with low speed bin
DCC Version 1.1
01 / 2014
2
© NANYA TECHNOLOGY CORP.
All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.









No Preview Available !

NT5CB128M8DN Даташит, Описание, Даташиты
1Gb DDR3 SDRAM
NT5CB128M8DN / NT5CB64M16DP
NT5CC128M8DN / NT5CC64M16DP
Description
The 1Gb Double-Data-Rate-3 (DDR3/L) B-die DRAMs is double data rate architecture to achieve high-speed operation. It
is internally configured as an eight bank DRAM.
The 1Gb chip is organized as 16Mbit x 8 I/Os x 8 banks or 8Mbit x 16 I/Os x 8 bank devices. These synchronous devices
achieve high speed double-data-rate transfer rates of up to 2133 Mb/sec/pin for general applications.
The chip is designed to comply with all key DDR3/L DRAM key features and all of the control and address inputs are
synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks
(CK rising and falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source
synchronous fashion.
These devices operate with a single 1.5V ± 0.075V or 1.35V -0.067/+0.1V power supply and are available in BGA
packages.
DCC Version 1.1
01 / 2014
3
© NANYA TECHNOLOGY CORP.
All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.










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Номер в каталогеОписаниеПроизводители
NT5CB128M8DN1Gb DDR3 SDRAMNanya
Nanya

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