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C2925 PDF даташит

Спецификация C2925 изготовлена ​​​​«Panasonic» и имеет функцию, называемую «NPN Transistor - 2SC2925».

Детали детали

Номер произв C2925
Описание NPN Transistor - 2SC2925
Производители Panasonic
логотип Panasonic логотип 

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C2925 Даташит, Описание, Даташиты
Transistor
2SC2925
Silicon NPN epitaxial planer type
For low-frequency output amplification
Unit: mm
5.0±0.2
4.0±0.2
s Features
q High foward current transfer ratio hFE.
q Low collector to emitter saturation voltage VCE(sat).
s omAbsolute Maximum Ratings (Ta=25˚C)
.cParameter
Collector to base voltage
Collector to emitter voltage
UEmitter to base voltage
t4Peak collector current
Collector current
eCollector power dissipation
Junction temperature
eStorage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
60
50
15
1.5
0.7
750
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s ShElectrical Characteristics (Ta=25˚C)
taParameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
aCollector to base voltage
ICBO
ICEO
VCBO
VCB = 20V, IE = 0
VCE = 20V, IB = 0
IC = 10µA, IE = 0
1 µA
10 µA
60 V
.DCollector to emitter voltage
Emitter to base voltage
wForward current transfer ratio
VCEO
VEBO
hFE*
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 150mA
50
15
400 1000 2000
V
V
mCollector to emitter saturation voltage
w oTransition frequency
.cCollector output capacitance
VCE(sat)
fT
Cob
IC = 500mA, IB = 50mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
0.15 0.4
V
200 MHz
11 15 pF
w et4U*hFE Rank classification
eRank
R
S
T
www.DataShhFE 400 ~ 800 600 ~ 1200 1000 ~ 2000
1









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C2925 Даташит, Описание, Даташиты
Transistor
PC — Ta
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=10
30
10
3
25˚C
1
Ta=75˚C
–25˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Cob — VCB
40
f=1MHz
Ta=25˚C
35
30
25
20
15
10
5
0
1 3 10 30 100
Collector to base voltage VCB (V)
IC — VCE
120
Ta=25˚C
100
80
60
IB=100µA
90µA
80µA
70µA
60µA
50µA
40µA
40
30µA
20 20µA
10µA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2400
2000
hFE — IC
VCE=10V
1600
1200
800
Ta=75˚C
25˚C
–25˚C
400
0
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
2SC2925
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3 Ta=75˚C
25˚C
0.1
–25˚C
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
fT — IE
400
VCB=10V
Ta=25˚C
350
300
250
200
150
100
50
0
– 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3
Emitter current IE (A)
–1
2









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C2925 Даташит, Описание, Даташиты
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"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative character-
istics and applied circuit examples of the products. It does not constitute the warranting of industrial
property, the granting of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or gen-
eral electronic equipment (such as office equipment, communications equipment, measuring in-
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Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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harm the human body.
Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchas-
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mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-
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Please read the following notes before using the datasheets
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Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
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2001 MAR










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