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HDBL106G PDF даташит

Спецификация HDBL106G изготовлена ​​​​«Taiwan Semiconductor» и имеет функцию, называемую «Glass Passivated High Efficient Bridge Rectifiers».

Детали детали

Номер произв HDBL106G
Описание Glass Passivated High Efficient Bridge Rectifiers
Производители Taiwan Semiconductor
логотип Taiwan Semiconductor логотип 

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HDBL106G Даташит, Описание, Даташиты
HDBL101G - HDBL107G
Taiwan Semiconductor
CREAT BY ART
1A, 50V - 1000V Glass Passivated High Efficient Bridge Rectifiers
FEATURES
- Glass passivated junction
- Ideal for printed circuit board
- Reliable low cost construction utilizing molded plastic technique
- High surge current capability
- UL Recognized File # E-326854
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
DBL
MECHANICAL DATA
Case: Molded plastic body
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Polarity as marked on the body
Weight: 0.36 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
HDBL HDBL HDBL HDBL HDBL
SYMBOL
101G 102G 103G 104G 105G
Maximum repetitive peak reverse voltage
VRRM
50 100 200 400 600
Maximum RMS voltage
VRMS 35 70 140 280 420
Maximum DC blocking voltage
VDC 50 100 200 400 600
Maximum average forward rectified current
IF(AV)
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
Rating for fusing (t<8.3ms)
I2t 10.3
Maximum instantaneous forward voltage (Note 1)
IF= 1 A
VF 1.0 1.3
Maximum reverse current @ rated VR
TJ=25°C
TJ=125°C
Maximum reverse recovery time (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs,1% Duty Cycle
IR
trr
RθJL
RθJA
TJ
TSTG
5
500
50
15
40
- 55 to + 150
- 55 to + 150
Notes 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
HDBL
106G
800
560
800
1.7
75
HDBL
107G
1000
700
1000
UNIT
V
V
V
A
A
A2s
V
μA
ns
°C/W
°C
°C
Document Number: DS_D1311010
Version: F15









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HDBL106G Даташит, Описание, Даташиты
HDBL101G - HDBL107G
Taiwan Semiconductor
ORDERING INFORMATION
PART NO. PACKING CODE
HDBL10xG
(Note 1)
H
PACKING
CODE
C1
PACKING CODE
SUFFIX (*)
G
Note 1: "x" defines voltage from 50V (HDBL101G) to 1000V (HDBL107G)
*: Optional available
PACKAGE
DBL
PACKING
50 / TUBE
EXAMPLE
PREFERRED P/N PART NO.
HDBL107GHC1G HDBL107G
PART NO.
SUFFIX
H
PACKING CODE
C1
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
1.5
1
0.5
RESISTIVE OR
INDUCTION LOAD
0
0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE (°C)
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
10
HDBL101G -
HDBL104G
HDBL105G
1
HDBL106G -
HDBL107G
0.1
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
FORWARD VOLTAGE (V)
2
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
70
60
50
40
30
20
10
0
1
8.3ms Single Half Sine Wave
10
NUMBER OF CYCLES AT 60 Hz
100
1000
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
100
10 TJ=125°C
1
0.1
0
TJ=25°C
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1311010
Version: F15









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HDBL106G Даташит, Описание, Даташиты
70
60
50
40
30
20
10
0
0.1
FIG. 5 TYPICAL JUNCTION CAPACITANCE
HDBL101G -
HDBL105G
f=1.0MHz
Vsig=50mVp-p
HDBL106G -
HDBL107G
1 10 100
REVERSE VOLTAGE (V)
1000
PACKAGE OUTLINE DIMENSIONS
DBL
MARKING DIAGRAM
P/N
G
YW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
HDBL101G - HDBL107G
Taiwan Semiconductor
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
Unit (mm)
Min Max
6.20 6.50
7.24 8.00
8.12 8.51
2.40 2.60
0.89 1.14
0.46 0.58
5.00 5.20
1.39 1.90
1.27 2.03
3.81 4.69
0.22 0.33
7.600 8.90
Unit (inch)
Min
0.244
Max
0.256
0.285 0.315
0.320 0.335
0.094 0.102
0.035 0.045
0.018 0.023
0.197 0.205
0.055 0.075
0.050 0.080
0.150 0.185
0.009 0.013
0.299 0.350
Document Number: DS_D1311010
Version: F15










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Номер в каталогеОписаниеПроизводители
HDBL106GGlass Passivated High Efficient Bridge RectifiersTaiwan Semiconductor
Taiwan Semiconductor

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