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PDF HGTG30N60 Data sheet ( Hoja de datos )
| Número de pieza | HGTG30N60 | |
| Descripción | 600V Planar IGBT Chip | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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600V Planar IGBT Chip
600V, 60A, VCE(sat) = 1.8V
HGTG30N60
Part
HGTG30N60
VCES
600V
ICn
60A
VCE (sat) Typ
1.8
Die Size
6.6 x 6.6 mm2
See page 2 for ordering part numbers & supply formats
Applications
Features
• AC & DC Motor Controls
• Fast Switching & Low Conduction Loss
• General Purpose Inverters
• High Input Impedance
Maximum Ratings
• Short Circuit Rated
Symbol
BVCES
VGES
IC
ICM
SCWT
TJ, TSTG
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage
Drain Current1
Continuous (TC = 25°C)
Continuous (TC = 110°C)
Pulsed Collector Current
Short Circuit Withstand Time3
VCE = 360V, RG = 3Ω, VGE = 10V, TC = 125°C
Operation Junction & Storage Temperature
Ratings
600
±20
75
60
240
10
-55 to 150
Units
V
V
A
A
A
µS
°C
Static Characteristics, TJ = 25° unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
BVCES
ICES
IGES
Collector to Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250µA
VCE = 600
TJ = 25oC
TJ = 125oC
VGE = ±20
600
-
-
-
Notes:
1. Defined by chip design, not subject to 100% production test at wafer level
2. Performance will vary based on assembly technique and substrate choice
3. Repetitive Rating: Pulse width limited by maximum junction temperature
-
-
-
-
-
250
4.0
±250
V
µA
mA
nA
©2014 Fairchild Semiconductor Corporation & Micross Components
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet HGTG30N60.PDF ] | |
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