|
|
PDF HFD630A Data sheet ( Hoja de datos )
| Número de pieza | HFD630A | |
| Descripción | 200V N-Channel MOSFET | |
| Fabricantes | SemiHow | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HFD630A (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
August 2015
HFD630A / HFU630A
200V N-Channel MOSFET
BVDSS = 200 V
RDS(on) typ ȍ
ID = 9.0 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 12 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) ȍ 7\S #9GS=10V
100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD630A
1
2
3
HFU630A
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TA = 25)
Power Dissipation (TC = 25)
- Derate above 25
200
9.0 *
5.7 *
36 *
ρ30
232
9.0
9.5
2.5
45
0.36
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
Junction-to-Case
RșJA Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
2.77
50
110
Units
V
A
A
A
V
mJ
A
mJ
W
W
W/
Units
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͲΦΘΦΤΥ͑ͣͦ͑͢͡
1 page  
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
.ȍ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
ID (t)
DUT
VDD
VDS (t)
t p Time
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͲΦΘΦΤΥ͑ͣͦ͑͢͡
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HFD630A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HFD630 | N-Channel MOSFET | SemiHow |
| HFD630A | 200V N-Channel MOSFET | SemiHow |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |