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HFP4N60F PDF даташит

Спецификация HFP4N60F изготовлена ​​​​«SemiHow» и имеет функцию, называемую «600V N-Channel MOSFET».

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Номер произв HFP4N60F
Описание 600V N-Channel MOSFET
Производители SemiHow
логотип SemiHow логотип 

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HFP4N60F Даташит, Описание, Даташиты
July 2015
HFP4N60F
600V N-Channel MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 8.5 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 2.6 ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
BVDSS = 600 V
RDS(on) typ ȍ
ID = 4 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25)
- Derate above 25
600
4.0
2.5
16
ρ30
70
4
11
110
0.88
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
W
W/
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.15
--
62.5
Units
/W
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HFP4N60F Даташит, Описание, Даташиты
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 2 A
2.0
--
Off Characteristics
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125
VGS = ρ30 V, VDS = 0 V
600
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 4 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 480 V, ID = 4 A,
VGS = 10 V
(Note 4,5)
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 4 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 4 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
--
--
--
--
-- 4.0
2.6 3.2
V
Ÿ
-- -- V
-- 10
-- 100
-- ρ100
380 500
45 60
6.5 8.5
19 48
19 48
35 80
22 54
8.5 11 nC
2.1 -- nC
2.8 -- nC
-- 4
-- 16
-- 1.4
240 --
1.4 --
A
V
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=8mH, IAS=4A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$, di/dt”$ȝV, VDD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
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HFP4N60F Даташит, Описание, Даташиты
Typical Characteristics
101
VGS
Top : 10.0 V
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
Bottom : 4.0 V
100
10-1
100
* Notes :
1. 300us Pulse Test
2. T = 25oC
C
101
V , Drain-Source Voltage [V]
DS
Figure 1. On Region Characteristics
8
6
VGS = 10V
4
2 VGS = 20V
* Note : TJ = 25oC
0
012345678
ID, Drain Current[A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
600
C = C + C (C = shorted)
iss gs gd ds
Coss = Cds + Cgd
500
C Crss = Cgd
iss
400
Coss
300
200 * Note ;
1. VGS = 0 V
Crss 2. f = 1 MHz
100
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10
25oC
1
150oC
-25oC
* Notes :
1. V = 30V
DS
2. 300us Pulse Test
0.1
2 3 4 5 6 7 8 9 10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10
1
150oC 25oC
0.1
0.2
* Notes :
1. VGS= 0V
2. 300us Pulse Test
0.4 0.6 0.8 1.0
VSD, Source-Drain Voltage [V]
1.2
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
VDS = 120V
VDS = 300V
8 VDS = 480V
6
4
2
* Note : ID = 4.0A
0
0 2 4 6 8 10
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
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