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CHM6336JPT PDF даташит

Спецификация CHM6336JPT изготовлена ​​​​«Chenmko Enterprise» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CHM6336JPT
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители Chenmko Enterprise
логотип Chenmko Enterprise логотип 

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CHM6336JPT Даташит, Описание, Даташиты
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts CURRENT 5.8 Ampere
CHM6336JPT
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
FEATURE
* Small flat package. (SO-8 )
* Super high dense cell design for extremely low RDS(ON).
* High power and current handing capability.
* Lead free product is acquired.
CONSTRUCTION
* N-Channel Enhancement
CIRCUIT
8D D D D5
SO-8
4.06 (0.160)
3.70 (0.146)
5.00 (0.197)
4.69 (0.185)
1
4
8
5
1.75 (0.069)
1.35 (0.053)
.25 (0.010)
.05 (0.002)
6.20 (0.244)
5.80 (0.228)
.51 (0.020)
.10 (0.012)
1.27 (0.05)BSC
.25 (0.010)
.17 (0.007)
1S S S G4
Absolute Maximum Ratings
Symbol Parameter
VDSS
Drain-Source Voltage
TA = 25°C unless otherwise noted
VGSS
Gate-Source Voltage
ID Maximum Drain Current - Continuous
IDM Maximum Drain Current - Pulsed
PD Maximum Power Dissipation
TJ Operating Temperature Range
TSTG Storage Temperature Range
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
Dimensions in millimeters
CHM6336JPT
60
±20
5.8
24
2500
-55 to 150
-55 to 150
50
SO-8
Units
V
V
A
A
mW
°C
°C
°C/W
2007-11









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CHM6336JPT Даташит, Описание, Даташиты
RATING CHARACTERISTIC ( CHM6336JPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
VGS = 0 V, ID = 250 µA
VDS = 60 V, VGS = 0 V
VGS = 20V,VDS = 0 V
VGS = -20V, VDS = 0 V
60 V
1 µA
+100
-100
nA
nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage
RDS(ON) Static Drain-Source On-Resistance
g FS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS=10V, ID=5.8A
VGS=4.5V, ID=4.7A
VDS =15V, ID = 5.8.A
1 3V
33 41
41 55
m
11 S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 30V, VGS = 0V,
f = 1.0 MHz
SWITCHING CHARACTERISTICS (Note 4)
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
ton Turn-On Time
tr Rise Time
toff Turn-Off Time
tf Fall Time
VDS=30V, ID=5.8A
VGS=10V
VDD= 30V
ID = 4.4A, VGS= 10 V
RGEN= 1
750
105 pF
65
22 29
3.0
4.5
15 30
4 15
37 80
5 15
nC
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Drain-Source Diode Forward Current (Note 1)
VSD Drain-Source Diode Forward Voltage IS = 2A, VGS= 0 V (Note 2)
5.8 A
1.2 V









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CHM6336JPT Даташит, Описание, Даташиты
RATING CHARACTERISTIC CURVES ( CHM6336JPT )
Typical Electrical Characteristics
Figure 1. Output Characteristics
20
V G S =1 0 , 8 , 6 , 3 V
16
12
8
4
0
0 0.5 1.0 1.5 2.0
VDS , DRAIN-TO-SOURCE VOLTAGE (V)
2.5
Figure 2. Transfer Characteristics
10
8
6
4
TJ=125°C
TJ=-55°C
2
TJ=25°C
0
0 1.0 2.0 3.0 4.0 5.0
VGS , GATE-TO-SOURCE VOLTAGE (V)
Figure 3. Gate Charge
10
VDS=30V
ID=5.8A
8
6
4
2
0
0 4 8 12 16
Qg , TOTAL GATE CHARGE (nC)
20 24
Figure 4. On-Resistance Variation with
Temperature
2.2
VGS=10V
ID=5.8A
1.9
1.6
1.3
1.0
0.7
0.4
-100
-50 0
50 100 150
TJ , JUNCTION T EMPERATURE (°C)
200
Figure 5. Gate Threshold Variation with
Temperature
1.3
VDS=VGS
ID=250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50
75 100
TJ , JUNCTION T EMPERATURE (°C)
125
150










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Номер в каталогеОписаниеПроизводители
CHM6336JPTN-Channel Enhancement Mode Field Effect TransistorChenmko Enterprise
Chenmko Enterprise

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