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SCT30N120 PDF даташит

Спецификация SCT30N120 изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую «Silicon carbide Power MOSFET».

Детали детали

Номер произв SCT30N120
Описание Silicon carbide Power MOSFET
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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SCT30N120 Даташит, Описание, Даташиты
SCT30N120
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ
(typ., TJ = 150 °C) in an HiP247™ package
Datasheet - production data
Features
Very tight variation of on-resistance vs.
temperature
Very high operating temperature capability
(TJ = 200 °C)
Very fast and robust intrinsic body diode
Low capacitance
HiP247
3
2
1
Figure 1: Internal schematic diagram
Applications
Solar inverters, UPS
Motor drives
High voltage DC-DC converters
Switch mode power supply
Description
D(2, TAB)
G(1)
S(3)
AM01475v1_Tab
This silicon carbide Power MOSFET is produced
exploiting the advanced, innovative properties of
wide bandgap materials. This results in
unsurpassed on-resistance per unit area and
very good switching performance almost
independent of temperature. The outstanding
thermal properties of the SiC material, combined
with the device’s housing in the proprietary
HiP247™ package, allows designers to use an
industry standard outline with significantly
improved thermal capability. These features
render the device perfectly suitable for high-
efficiency and high power density applications.
Table 1: Device summary
Order code
Marking
Package
Packaging
SCT30N120
SCT30N120
HiP247™
Tube
The device meets ECOPACK standards, an environmentally-friendly grade of products commonly
referred to as “halogen-free”. See Section 6: "Package information".
June 2016
DocID023109 Rev 10
This is information on a product in full production.
1/13
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SCT30N120 Даташит, Описание, Даташиты
Contents
Contents
SCT30N120
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Package information ..................................................................... 10
3.1 HiP247 package information ........................................................... 10
4 Revision history ............................................................................ 12
2/13 DocID023109 Rev 10









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SCT30N120 Даташит, Описание, Даташиты
SCT30N120
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
VDS
VGS
ID
ID
ID
IDM(1)
PTOT
Tstg
Tj
Drain-source voltage
Gate-source voltage
Drain current (continuous) at TC = 25 °C
(limited by die)
Drain current (continuous) at TC = 25 °C
(limited by package)
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Storage temperature range
Operating junction temperature range
Notes:
(1)Pulse width limited by safe operating area.
Symbol
Rthj-case
Rthj-amb
Table 3: Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Electrical ratings
Value
1200
-10 to 25
45
40
34
90
270
-55 to 200
Unit
V
V
A
A
A
A
W
°C
°C
Value
0.65
40
Unit
°C/W
°C/W
DocID023109 Rev 10
3/13










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Номер в каталогеОписаниеПроизводители
SCT30N120Silicon carbide Power MOSFETSTMicroelectronics
STMicroelectronics

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