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C6060 PDF даташит

Спецификация C6060 изготовлена ​​​​«Toshiba» и имеет функцию, называемую «NPN Transistor - 2SC6060».

Детали детали

Номер произв C6060
Описание NPN Transistor - 2SC6060
Производители Toshiba
логотип Toshiba логотип 

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C6060 Даташит, Описание, Даташиты
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6060
Power Amplifier Applications
Driver Stage Amplifier Applications
High-transition frequency: fT = 100 MHz (typ.)
2SC6060
Unit: mm
Absolute Maximum Ratings (Tc = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO 230 V
Collector-emitter voltage
VCEO 230 V
Emitter-base voltage
VEBO 5 V
Collector current
DC
pulse
Base current
Ta = 25°C
Collector power dissipation
Tc = 25°C
Junction temperature
Storage temperature range
IC
ICP
IB
PC
Tj
Tstg
1.0
2.0
100
2
20
150
55 to 150
A
A
mA
W
W
°C
°C
1: BASE
2: COLLECTOR
3: EMITTER
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 1.7 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2008-11-07
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C6060 Даташит, Описание, Даташиты
Electrical Characteristics (Tc = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Conditions
ICBO
IEBO
V (BR) CEO
hFE
VCE (sat)
VBE
fT
Cob
VCB = 230 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 0.1 A
IC = 500 mA, IB = 50 mA
VCE = 5 V, IC = 500 mA
VCE = 10 V, IC = 100 mA
VCB = 10 V, IE = 0, f = 1MHz
Marking
2SC6060
Min Typ. Max Unit
⎯ ⎯ 100 nA
⎯ ⎯ 100 nA
230 ⎯ ⎯ V
100 320
⎯ ⎯ 0.5 V
⎯ ⎯ 1.0 V
100 MHz
14.5
pF
C6060
Part No. (or abbreviation code)
Lot No.
A line indicates
Lead (Pb)-Free Finish.
2 2008-11-07
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C6060 Даташит, Описание, Даташиты
1
0.8
0.6
0.4
0.2
0
0
IC – VCE
20 mA
10 mA
6 mA
8 mA
4 mA
2 mA
IB = 1 mA
Common emitter
Tc=25
Single non-repetitive pulse
2 4 6 8 10
Collector-emitter voltage VCE (V)
1000
100
hFE – IC
Tc = 100°C
25°C
25°C
Common emitter
VCE = 5 V
10 Single non-repetitive pulse
0.001
0.01
0.1
1
Collector current IC (A)
10
2SC6060
IC – VBE
2 Common emitter
VCE = 5 V
Single non-repetitive pulse
1.5
25
Tc = 100°C
25
1
0.5
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Base-emitter voltage VBE (V)
VCE (sat) – IC
1
Common emitter
β=10
Single non-repetitive pulse
0.1
0.01
0.001
Tc = 100°C
25°C
25°C
0.01
0.1
1
Collector current IC (A)
10
1000
100
Common emitter
Ta=25
VCE=10 V
fT – IC
10
1
0.001
0.01
0.1
Collector current IC (A)
1
24
20
PC – Ta
Tc=Ta Infinite heat sink
No heat sink
16
12
8
4
0
0
40 80 120
Ambient temperature Ta (°C)
160
3 2008-11-07
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