9N65 PDF даташит
Спецификация 9N65 изготовлена «Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL POWER MOSFET». |
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Детали детали
Номер произв | 9N65 |
Описание | N-CHANNEL POWER MOSFET |
Производители | Unisonic Technologies |
логотип |
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9N65
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
9A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 9N65 is an N-channel mode power MOSFET using UTC’s
advanced technology to provide customers with planar stripe and
DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 9N65 is generally applied in high efficiency switch mode
power supplies and uninterruptible power supplies.
FEATURES
* RDS(ON)=1.1Ω @ VGSS=10V
* High Switching Speed
* Improved dv/dt Capability
* 100% Avalanche Tested
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
9N65L-TA3-T
9N65G-TA3-T
9N65L-TF3-T
9N65G-TF3-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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9N65
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
650 V
±30 V
Drain Current
Continuous, @TC=25°C
VGSS@10V @TC=100°C
Pulsed (Note 2)
ID
IDM
9A
5.4 A
36 A
Avalanche Current (Note 2)
IAR 5.2 A
Avalanche Energy
Single Pulsed (Note 2)
Repetitive (Note 3)
EAR
EAS
16 mJ
375 mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
2.8 V/ns
Power Dissipation(@TC=25°C)
Linear Derating Factor
TO-220
TO-220F
TO-220
TO-220F
PD
167
44
W
1.3
0.35
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Starting TJ=25°C, L=9.25mH, RG=25Ω, IAS=9A.
4. ISD≤5.2A, di/dt≤90A/µs, VDD≤BVDSS, TJ≤150°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F
TO-220
TO-220F
SYMBOL
θJA
θJC
RATINGS
62
62.5
0.75
2.86
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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9N65
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS ID=250µA, VGS=0V
∆
BVDSS
/∆TJ
Reference
(Note 3)
to
25°C,
ID=1mA
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
IDSS
VDS=650V, VGS=0V
VDS=520V, VGS=0V, TJ=125°C
IGSS
VGS=+30V
VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS= VGS, ID=250µA
VGS=10V, ID=5.1A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain ("Miller") Charge
QG
QGS
QGD
VDS=520V, VGS=10V, ID=9A
(Note 2)
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=325V, ID=9A, RG=9.1Ω,
RD = 62Ω (Note 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
(Note 1)
IS MOSFET symbol
showing the integral
ISM reverse p-n junction
diode.
Drain-Source Diode Forward Voltage
VSD TJ=25°C, IS=9A,VGS=0V(Note 2)
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Pulse width≤300µs; duty cycle≤2%.
3. Uses IRFIB5N65A data and test conditions
MIN TYP MAX UNIT
650 V
0.67 V/°C
25
250
+100
-100
µA
nA
nA
2.0 4.0 V
0.85 1.1 Ω
1417
177
7
pF
pF
pF
48
12
19
14
20
34
18
nC
nC
nC
ns
ns
ns
ns
9A
36 A
1.5 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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