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B5818WS PDF даташит

Спецификация B5818WS изготовлена ​​​​«JCET» и имеет функцию, называемую «SCHOTTKY BARRIER DIODE».

Детали детали

Номер произв B5818WS
Описание SCHOTTKY BARRIER DIODE
Производители JCET
логотип JCET логотип 

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B5818WS Даташит, Описание, Даташиты
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
B5817WS-5819WS SCHOTTKY BARRIER DIODE
FEATURES
For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications
MARKING:
B5817WS:SJ
B5818WS:SK
B5819WS:SL
SOD-323
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25
Parameter
Non-repetitive peak reverse voltage
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current
Non-repetitive Peak Forward Surge Current
@t=8.3ms
Repetitive peak forward current
Power dissipation
Thermal resistance junction to
ambient
Junction temperature
Storage temperature
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
IFRM
Pd
RθJA
TJ
TSTG
B5817WS
20
20
14
B5818WS B5819WS
30 40
30 40
21
1
9
1.5
250
400
125
-55~+150
28
Unit
V
V
V
A
A
A
mW
/W
ELECTRICAL CHARACTERISTICS (Ta= 25unles s other wise specified)
Pa rameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Symbol
V(BR)
IR
VF
CD
Test c onditions
IR= 1mA
VR=20V
VR=30V
VR=40V
B5817WS
B5818WS
B5819WS
B5817WS
B5818WS
B5819WS
B5817WS
B5818WS
B5819WS
IF=1A
IF=3A
IF=1A
IF=3A
IF=1A
IF=3A
VR=4V, f=1MHz
Min
20
30
40
Max
1
0.45
0.75
0.55
0.875
0.6
0.9
120
Unit
V
mA
V
V
V
pF
www.cj-elec.com
1
D,Mar,2015









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B5818WS Даташит, Описание, Даташиты
Typical Characteristics
B5817WS
Forward Characteristics
3000
1000
Ta=100
100
Ta=25
10
200 400 600
FORWARD VOLTAGE VF (mV)
800
250
200
150
100
50
0
0
Capacitance Characteristics
Ta=25
f=1MHz
5 10 15
REVERSE VOLTAGE VR (V)
20
Reverse Characteristics
1
Ta=100
0.1
Ta=25
0.01
1E-3
0.1
1
REVERSE VOLTAGE VR (V)
10 20
300
250
200
150
100
50
0
0
Power Derating Curve
25 50 75 100 125
AMBIENT TEMPERATURE Ta ()
150
www.cj-elec.com
2
D,Mar,2015









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B5818WS Даташит, Описание, Даташиты
SOD-323 Package Outline Dimensions
SOD-323 Suggested Pad Layout
www.cj-elec.com
3
D,Mar,2015










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Номер в каталогеОписаниеПроизводители
B5818WSCHOTTKY BARRIER DIODEJCET
JCET
B5818WSCHOTTKY DIODEShunye
Shunye
B5818WSchottky DiodeTaiwan Semiconductor
Taiwan Semiconductor
B5818WSchottky Barrier DiodeLGE
LGE

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