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PDF OPE5594A Data sheet ( Hoja de datos )
| Número de pieza | OPE5594A | |
| Descripción | GaAs Infrared Emitter | |
| Fabricantes | ETC | |
| Logotipo |  |
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GaAs Infrared Emitter C
OPE5594A
The OPE5594S is GaAlAs infrared emitting diode
DIMENSIONS (Unit : mm)
that is designed for high reliability, high radiant intensity and
low forward voltage .This device is optimized for efficiency
at emission wavelength 940nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 plastic package
and has narrow beam angle with lensed package
and cup frame.
FEATURESC
• High-output powerC
• Narrow beam angle
• High reliability and long term stability
• Available for pulse operating
C
APPLICATIONSC
• Optical emitters
• Optical switches
• Smoke sensors
• IR remote control
• IR sound transmission
2- 0.5
2.5
Anode
Cathode
Tolerance : ±0.2mm
STORAGE
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
for this device.
MAXIMUM RATINGSC C C CCCCCCCCCCCCCCCCC(Ta=25°C )
Item
Symbol
Rating
Unit
Power Dissipation
PDC 150
Forward current
Pulse forward current CCCʭ1C
IFC
IFPC
100
1.0
Reverse voltage
VRC 5.0
Operating temp.
Topr.
-25~ +85
Soldering temp. CCCCCCCCCCCCCCʭ2
Tsol.
260.
ʭ1.Duty ratio = 1/100, pulse width=0.1ms.
ʭ2.Lead Soldering Temperature (2mm from case for 5sec.).
C
EC
AC
C
°CC
°CC
ELECTRO-OPTICALCHARACTERISTICS
Item Symbol
Forward voltage
VF
Reverse current
IR
Capacitance
Ct
Radiant intensity
Ie
Peak emission wavelength
p
Spectral bandwidth 50%
Half angle
CC
Conditions
IF =100mA
VR= 5V
f = 1MHz
IF=100mA
IF= 50mA
IF= 50mA
IF=100mA
(Ta=25°C)
Min. Typ. Max. Unit
1.4 1.7 V
10 µA
20 pF
80 mW/
940 nm
45 nm
±10 deg.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet OPE5594A.PDF ] | |
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