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NP119N04NUK PDF даташит

Спецификация NP119N04NUK изготовлена ​​​​«Renesas» и имеет функцию, называемую «N-channel Power MOS FET».

Детали детали

Номер произв NP119N04NUK
Описание N-channel Power MOS FET
Производители Renesas
логотип Renesas логотип 

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NP119N04NUK Даташит, Описание, Даташиты
Preliminary Data Sheet
NP119N04NUK
40 V – 120 A – N-channel Power MOS FET
Application: Automotive
R07DS1252EJ0100
Rev.1.00
Mar 30, 2015
Description
The NP119N04NUK is N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
Super low on-state resistance
RDS(on) = 2.15 mΩ MAX. (VGS = 10 V, ID = 60 A)
Low Ciss: Ciss = 7400 pF TYP. (VDS = 25 V)
Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
Lead Plating
Packing
NP119N04NUK-S18-AY *1 Pure Sn (Tin)
Tube 50 p/tube
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package
TO-262 (MP-25SK)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) *1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current *2
Repetitive Avalanche Energy *2
Tstg
IAR
EAR
Notes: *1 TC = 25°C, PW 10 μs, Duty Cycle 1%
*2 RG = 25 Ω, VGS = 20 V 0 V
Ratings
40
±20
±120
±480
250
1.8
175
–55 to +175
56
313
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.60 °C/W
83.3 °C/W
R07DS1252EJ0100 Rev.1.00
Mar 30, 2015
Page 1 of 6









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NP119N04NUK Даташит, Описание, Даташиты
NP119N04NUK
Preliminary
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance *1
Drain to Source On-state Resistance *1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage *1
Reverse Recovery Time
Reverse Recovery Charge
Note: *1 Pulsed test
Symbol
IDSS
IGSS
VGS(th)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
MIN.
2.0
50
TYP.
3.0
114
1.80
7400
1000
390
30
11
105
13
130
32
31
0.9
56
80
MAX.
1
±100
4.0
2.15
11100
1500
710
70
30
210
40
195
1.5
Unit
μA
nA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
VDS = 40 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 μA
VDS = 5 V, ID = 60 A
VGS = 10 V, ID = 60 A
VDS = 25 V
VGS = 0 V
f = 1 MHz
VDD = 20 V, ID = 60 A
VGS = 10 V
RG = 0 Ω
VDD = 32 V
VGS = 10 V
ID = 120 A
IF = 120 A, VGS = 0 V
IF = 120 A, VGS = 0 V
di/dt = 100 A/μs
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
PG. RG
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VGS
VGS
Wave Form
10%
0
VDD
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off)
tf
ton toff
R07DS1252EJ0100 Rev.1.00
Mar 30, 2015
Page 2 of 6









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NP119N04NUK Даташит, Описание, Даташиты
NP119N04NUK
Preliminary
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
RDS(ON) Limited
ID(Pulse) = 480 A
(VGS=10 V)
ID(DC) = 120 A
100
PW = 100 μs
Power Dissipation Limited
10
Secondary Breakdown Limited
1
TC = 25°C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100 Rth(ch-A) = 83.3°C/W
10
1 Rth(ch-C) = 0.60°C/W
0.1
Single Pulse
0.01
100 μ
1m
10 m 100 m
1
PW - Pulse Width - s
10
100 1000
R07DS1252EJ0100 Rev.1.00
Mar 30, 2015
Page 3 of 6










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