|
|
PDF NP60N04VDK Data sheet ( Hoja de datos )
| Número de pieza | NP60N04VDK | |
| Descripción | N-channel Power MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NP60N04VDK (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
Preliminary Data Sheet
NP60N04VDK
40 V – 60 A – N-channel Power MOS FET
Application: Automotive
R07DS1014EJ0100
Rev.1.00
Feb 21, 2013
Description
The NP60N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
Super low on-state resistance
RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A)
Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)
Logic level drive type
Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP60N04VDK-E1-AY *1
NP60N04VDK-E2-AY *1
Lead Plating
Pure Sn (Tin)
Packing
Tape 2500 p/reel
Taping (E1 type)
Taping (E2 type)
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package
TO-252 (MP-3ZP)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) *1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current *2
Repetitive Avalanche Energy *2
Tstg
IAR
EAR
Notes: *1 TC = 25°C, PW 10 s, Duty Cycle 1%
*2 RG = 25 , VGS = 20 V 0 V
Ratings
40
20
60
240
105
1.2
175
–55 to +175
28
78
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.43 °C/W
125 °C/W
R07DS1014EJ0100 Rev.1.00
Feb 21, 2013
Page 1 of 6
1 page  
NP60N04VDK
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
9
8
7
6
VGS = 4.5 V
ID = 15 A
5
4
3 VGS = 10 V
2 ID = 30 A
1
0
–100 –50
0
Pulsed
50 100 150 200
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
1000
100
VDD = 20 V
VGS = 10 V
RG = 0 Ω
td(off)
td(on)
10 tr
tf
1
0.1 1 10 100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
VGS = 10 V
100
10 VGS = 4.5 V
VGS = 0 V
1
0.1
0
Pulsed
0.2 0.4 0.6 0.8 1.0 1.2
VF(S-D) - Source to Drain Voltage - V
Preliminary
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
VGS = 0 V
f = 1 MHz
100
0.1
1
Coss
Crss
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35 14
30 VDD = 32 V
20 V
25 8 V
12
10
20 8
15 6
VGS
10 4
5 VDS
2
ID = 60 A
00
0 10 20 30 40 50
QG- Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1 1 10 100
IF - Drain Current - A
R07DS1014EJ0100 Rev.1.00
Feb 21, 2013
Page 5 of 6
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP60N04VDK.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NP60N04VDK | N-channel Power MOS FET | Renesas |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |