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PDF NP75N04YLG Data sheet ( Hoja de datos )
| Número de pieza | NP75N04YLG | |
| Descripción | N-channel Power MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Preliminary Data Sheet
NP75N04YLG
40 V – 75 A – N-channel Power MOS FET
Application: Automotive
R07DS1247EJ0100
Rev.1.00
Mar 02, 2015
Description
The NP75N04YLG is N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
• Super low on-state resistance
RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 38 A)
RDS(on) = 8.3 mΩ MAX. (VGS = 4.5 V, ID = 38 A)
• Logic level drive type
• Gate to Source ESD protection diode built in
• Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
Lead Plating
Packing
NP75N04YLG-E1-AY *1 Pure Sn (Tin)
Tape 2500 p/reel
Taping (E1 type)
NP75N04YLG-E2-AY *1
Taping (E2 type)
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package
8-pin HSON
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Ratings
Drain to Source Voltage (VGS = 0 V)
VDSS
40
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
ID(DC)
±75
Drain Current (pulse) *1
ID(pulse)
±225
Total Power Dissipation (TC = 25°C)
PT1
138
Total Power Dissipation (TA = 25°C) *2
PT2
1.0
Channel Temperature
Tch 175
Storage Temperature
Tstg –55 to +175
Repetitive Avalanche Current *3
IAR
35
Repetitive Avalanche Energy *3
EAR
123
Notes: *1 TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
*2 Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt with 4% Copper area (35 μm)
*3 Tch(peak) ≤ 150°C, RG = 25 Ω
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.09 °C/W
150 °C/W
R07DS1247EJ0100 Rev.1.00
Mar 02, 2015
Page 1 of 6
1 page  
NP75N04YLG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
9
8 VGS = 10V
7 4.5V
6
5
4
3
2
1
0
–100
–50
0
ID = 38 A
Pulsed
50 100 150 200
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
td(off)
tr td(on)
10
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
0.1 1
tf
10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
VGS = 0 V
10
1
0.1
0
Pulsed
0.2 0.4 0.6 0.8 1.0 1.2
VF(S-D) - Source to Drain Voltage - V
Preliminary
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
VGS = 0 V
f = 1 MHz
Crss
100
0.01
0.1
1
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35 14
30
VDD = 32 V
25
20 V
8V
20
12
10
8
15 6
10
VGS
4
5 VDS 2
ID = 75 A
00
0 10 20 30 40 50 60 70 80
QG- Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1 1 10 100
IF - Drain Current - A
R07DS1247EJ0100 Rev.1.00
Mar 02, 2015
Page 5 of 6
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP75N04YLG.PDF ] | |
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