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PDF NP75P04YLG Data sheet ( Hoja de datos )
| Número de pieza | NP75P04YLG | |
| Descripción | N-channel Power MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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NP75P04YLG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0183EJ0200
Rev.2.00
Mar 16, 2011
Description
The NP75P04YLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance
⎯ RDS(on) = 9.7 mΩ MAX. (VGS = −10 V, ID = −37.5 A)
⎯ RDS(on) = 14 mΩ MAX. (VGS = −5 V, ID = −37.5 A)
• Logic level drive type
• Gate to Source ESD protection diode built in
• Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP75P04YLG -E1-AY ∗1
NP75P04YLG -E2-AY ∗1
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package
8-pin HSON, Taping (E1 type)
8-pin HSON, Taping (E2 type)
<R>
<R>
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) ∗2
Channel Temperature
Storage Temperature
Single Avalanche Current ∗3
Single Avalanche Energy ∗3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
−40
m20
m75
m225
138
1.0
175
−55 to +175
35
123
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-C)
Rth(ch-A)
1.09
150
°C/W
°C/W
Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt
*3. Starting Tch = 25°C, VDD = −20 V, RG = 25 Ω, L = 100 μH, VGS = −20 → 0 V
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R07DS0183EJ0200 Rev.2.00
Mar 16, 2011
Page 1 of 6
1 page  
NP75P04YLG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
18
ID = −37.5 A
Pulsed
16
14
12 VGS = −5 V
10
8
6
4
2
0
-100 -50 0 50
−10 V
100 150
200
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
td(of f )
100 tf
td( on)
10
tr
1
-0.1
-1
VDD = −20 V
VGS = −10 V
RG = 0 Ω
-10 -100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
-1000
-100
-10
VGS = −10 V
0V
-1
Pulsed
-0.1
0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
Coss
100
10
-0.1
-1
Cr ss
VGS = 0 V
f = 1 MHz
-10 -100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-40
-35
-30
-25
-20
-15
-10
-5
-0
0
VDD = −32 V
−20 V
−8 V
-12
-10
VGS -8
-6
-4
V DS
ID = −75 A
-2
-0
20 40 60 80 100
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
0.1
di/dt = −100 A/μs
VGS = 0 V
1 10 100
IF - Drain Current - A
R07DS0183EJ0200 Rev.2.00
Mar 16, 2011
Page 5 of 6
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP75P04YLG.PDF ] | |
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