NP90N06VLG PDF даташит
Спецификация NP90N06VLG изготовлена «Renesas» и имеет функцию, называемую «N-channel Power MOS FET». |
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Детали детали
Номер произв | NP90N06VLG |
Описание | N-channel Power MOS FET |
Производители | Renesas |
логотип |
8 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP90N06VLG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP90N06VLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP90N06VLG-E1-AY Note
NP90N06VLG-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE
TO-252 (MP-3ZP) typ. 0.27 g
FEATURES
• Logic level
• Built-in gate protection diode
• Super low on-state resistance
RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 45 A)
RDS(on)2 = 12.5 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
• High current rating
ID(DC) = ±90 A
• Low input capacitance
Ciss = 4600 pF TYP.
• Designed for automotive application and AEC-Q101 qualified
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±90
±180
Total Power Dissipation (TC = 25°C)
PT1
105
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
PT2
Tch
Tstg
IAR
EAR
1.2
175
−55 to +175
32
102
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, RG = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.43
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19794EJ1V0DS00 (1st edition)
Date Published May 2009 NS
Printed in Japan
2009
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NP90N06VLG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 60 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Gate to Source Threshold Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(th)
| yfs |
RDS(on)1
VDS = VGS, ID = 250 μA
VDS = 5 V, ID = 45 A
VGS = 10 V, ID = 45 A
RDS(on)2
VGS = 4.5 V, ID = 35 A
Input Capacitance
Ciss VDS = 25 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 45 A,
Rise Time
tr VGS = 10 V,
Turn-off Delay Time
td(off)
RG = 0 Ω
Fall Time
tf
Total Gate Charge
QG VDD = 48 V,
Gate to Source Charge
QGS VGS = 10 V,
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
ID = 90 A
IF = 90 A, VGS = 0 V
Reverse Recovery Time
trr IF = 90 A, VGS = 0 V,
Reverse Recovery Charge
Note Pulsed test
Qrr di/dt = 100 A/μs
MIN. TYP. MAX. UNIT
1 μA
±10 μA
1.4 2.5 V
30 66
S
6.2 7.8 mΩ
7.5 12.5 mΩ
4600 6900 pF
370 560 pF
220 400 pF
17 34 ns
13 33 ns
76 152 ns
7 18 ns
90 135 nC
13 nC
26 nC
0.9 1.5
V
38 ns
56 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 → 0 V
50 Ω
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
2 Data Sheet D19794EJ1V0DS
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NP90N06VLG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
RDS(
(V
on)
GS
Limit
= 1i 0
ed
V)
ID(DC)
DC
ID(pulse)
PW
= 1i 00 μs
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
125
100
75
50
25
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
1
TC = 25°C
Single Pulse
0.1
0.1
1
10
VDS - Drain to Source Voltage - V
100
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125°C/W
100
10
Rth(ch-C) = 1.43°C/W
1
0.1
0.01
100 μ
1m
10 m
100 m
1
10
PW - Pulse Width - s
Single Pulse
100 1000
Data Sheet D19794EJ1V0DS
3
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