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Номер произв	25N60
Описание	N-Channel MOSFET Transistor
Производители	Inchange Semiconductor
логотип
1Page No Preview Available ! INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 25N60 ·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.21Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching regulators ·Switching converters,motor drivers,relay drivers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 600 ±30 V V ID Drain Current-Continuous 25 A IDM Drain Current-Single Plused 80 A PD Total Dissipation @TC=25℃ 300 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn No Preview Available ! INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 25N60 ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current CONDITIONS VGS= 0; ID=250µA VDS= VGS; ID=250µA IS= 25A ;VGS= 0 VGS= 10V; ID= 12.5A VGS= ±20V;VDS= 0 VDS=600V; VGS= 0 MIN TYPE MAX UNIT 600 V 2.0 4.0 V 1.5 V 0.21 Ω ±100 nA 50 µA · isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn
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