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даташит 25N60 PDF ( Datasheet )

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Номер произв 25N60
Описание N-Channel MOSFET Transistor
Производители Inchange Semiconductor
логотип Inchange Semiconductor логотип 



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25N60 Даташит, Описание, Даташиты
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
25N60
·FEATURES
·Drain Current ID= 25A@ TC=25
·Drain Source Voltage-
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.21Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching regulators
·Switching converters,motor drivers,relay drivers
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
600
±30
V
V
ID Drain Current-Continuous
25 A
IDM Drain Current-Single Plused
80 A
PD Total Dissipation @TC=25
300 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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25N60 Даташит, Описание, Даташиты
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
25N60
·ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
CONDITIONS
VGS= 0; ID=250µA
VDS= VGS; ID=250µA
IS= 25A ;VGS= 0
VGS= 10V; ID= 12.5A
VGS= ±20V;VDS= 0
VDS=600V; VGS= 0
MIN TYPE MAX UNIT
600 V
2.0 4.0 V
1.5 V
0.21 Ω
±100 nA
50 µA
·
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
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