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Номер произв | 25N60 | |||
Описание | N-Channel MOSFET Transistor | |||
Производители | Inchange Semiconductor | |||
логотип | ![]() |
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1Page
![]() INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
25N60
·FEATURES
·Drain Current ID= 25A@ TC=25℃
·Drain Source Voltage-
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.21Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching regulators
·Switching converters,motor drivers,relay drivers
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
600
±30
V
V
ID Drain Current-Continuous
25 A
IDM Drain Current-Single Plused
80 A
PD Total Dissipation @TC=25℃
300 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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![]()
![]() INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
25N60
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
CONDITIONS
VGS= 0; ID=250µA
VDS= VGS; ID=250µA
IS= 25A ;VGS= 0
VGS= 10V; ID= 12.5A
VGS= ±20V;VDS= 0
VDS=600V; VGS= 0
MIN TYPE MAX UNIT
600 V
2.0 4.0 V
1.5 V
0.21 Ω
±100 nA
50 µA
·
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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Всего страниц | 2 Pages | |||
Скачать PDF | [ 25N60.PDF Даташит ] |
Номер в каталоге | Описание | Производители |
25N60 | N-Channel MOSFET Transistor | ![]() Inchange Semiconductor |
25N60N | FCH25N60N | ![]() Fairchild Semiconductor |
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DataSheet26.com | 2020 | Контакты | Поиск |