NTE262 PDF даташит
Спецификация NTE262 изготовлена «NTE» и имеет функцию, называемую «Silicon Complementary Transistors Darlington Power Amplifier». |
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Детали детали
Номер произв | NTE262 |
Описание | Silicon Complementary Transistors Darlington Power Amplifier |
Производители | NTE |
логотип |
2 Pages
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NTE261 (NPN) & NTE262 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in
a TO220 type package designed for general purpose amplifier and low–speed switching applications.
Features:
D High DC Current Gain: hFE = 2500 Typ @ IC = 4A
D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA
D Low Collector–Emitter Saturation Voltage:
VCE(sat) = 2V Max @ IC = 3A
= 4V Max @ IC = 5A
D Monolithic Construction with Built–In Base–Emitter Shunt Resistor
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mA
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.52W/°C
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/°C
Unclamped Inductive Load Energy (Note 1), E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mJ
Operating Junction Temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.92°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Note 1. IC = 1A, L = 100mH, P.R.F. = 10Hz, VCC = 20V, RBE = 100Ω.
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 2)
VCEO(sus) IC = 100mA, IB = 0, Note 2
ICEO VCE = 50V, IB = 0
ICBO VCB = 100V, IE = 0
IEBO VBE = 5V, IC = 0
100 – – V
– – 0.5 mA
– – 0.2 mA
– – 2.0 mA
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(on)
IC = 0.5A, VCE = 3V
IC = 3A, VCE = 3V
IC = 3A, IB = 12mA
IC = 5A, IB = 20mA
IC = 3A, VCE = 3V
1000 – –
1000 – –
– – 2.0 V
– – 4.0 V
– – 2.5 V
Small–Signal Current Gain
Output Capacitance
NTE261
NTE262
|hfe| IC = 3A, VCE = 4V, f = 1MHz 4.0 –
–
Cob
VCB = 10V, IE = 0, f = 0.1MHz –
– 300 pF
– – 200 pF
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
NTE261
C
B
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
E Dia Max
.500
(12.7)
Min
NTE262
C
B
E
.070 (1.78) Max
Base
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Max
Emitter
Collector/Tab
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NTE262 | Silicon Complementary Transistors Darlington Power Amplifier | NTE |
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