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даташит 50N06 PDF ( Datasheet )

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Номер произв 50N06
Описание N-Channel MOSFET Transistor
Производители Inchange Semiconductor
логотип Inchange Semiconductor логотип 



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50N06 Даташит, Описание, Даташиты
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
50N06
·DESCRIPTION
·Drain Current ID= 50A@ TC=25
·Drain Source Voltage-
: VDSS= 60V(Min)
·Fast Switching Speed
·APPLICATIONS
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
60 V
VGS Gate-Source Voltage
±30
V
ID Drain Current-continuous@ TC=2550 A
Ptot Total Dissipation@TC=25
150 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.96 /W
62.5 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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50N06 Даташит, Описание, Даташиты
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25)
isc Product Specification
50N06
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD Diode Forward On-Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
CONDITIONS
VGS= 0; ID= 250µA
VDS= VGS; ID=250µA
IF=4A ;VGS= 0
VGS= 10V; ID=25A
VGS= ±30V;VDS= 0
VDS= 60V; VGS= 0
MIN TYPE MAX UNIT
60 V
2.0 4.0 V
1.4 V
0.028 Ω
±100 nA
250 µA
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn










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