DataSheet.es    


Datasheet 70N10 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
170N10N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 70N10 ·DESCRIPTION ·Drain Current ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PAR
Inchange Semiconductor
Inchange Semiconductor		mosfet
270N10LSPI70N10L

Preliminary data SPI70N10L SPP70N10L,SPB70N10L Feature SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated 100 16 70 P-TO220-3-1 V m
Infineon Technologies
Infineon Technologies		data


70N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
170N03Power-Transistor

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Prod
Tuofeng Semiconductor
Tuofeng Semiconductor		transistor
270N03N-Channel Enhancement Mode Power MOSFET

N-Channel Enhancement Mode Power MOSFET AF70N03 „ Features -Low Gate Charge -Simple Drive Requirement -Fast Switching -RoHS Compliant -Pb Free Plating Product „ Product Summary „ General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ru
Anachip
Anachip		mosfet
370N03N-Ch 30V Fast Switching MOSFETs

CMD70N03/CMU70N03 N-Ch 30V Fast Switching MOSFETs General Description The 70N03 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The 70N03 meet the RoHS and Green
Cmos
Cmos		mosfet
470N03N-Channel MOSFET

70N03 N-Channel MOSFET TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm +1.50 0.15 -0.15 3.80 +5.55 0.15 -0.15 + 0.150 .5 0 -0.15 + 0.281 .5 0 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 0.252 .6 5 -0.1 1 Gate 2 Drain 3 Source G D S
CANYU
CANYU		mosfet
570N03N-CHANNEL MOSFET

BRI70N03 Rev.D Nov.-2015 DATA SHEET 描述 / Descriptions TO-251 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-251 Plastic Package. 特征 / Features 具有低导通电阻的超高密度设计，坚固可靠，表面贴装封装。 Super high dense cell design for low RDS(on)
BLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS		mosfet
670N03N-channel Enhancement-mode MOSFET

GFB70N03 N-Channel Enhancement-Mode MOSFET H C N T E TRE NF E G TO-263AB 0.380 (9.65) 0.420 (10.67) 0.21 (5.33) Min. D VDS 30V RDS(ON) 8mΩ ID 70A D ® G 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.055 (1.40) S 0.42 (10.66) 0.320 (8.13) 0.360 (9.14) G PIN D S 0.575 (14.60
General Semiconductor
General Semiconductor		mosfet
770N06N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 70N06 ·DESCRIPTION ·Drain Current ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARA
Inchange Semiconductor
Inchange Semiconductor		mosfet



Esta página es del resultado de búsqueda del 70N10. Si pulsa el resultado de búsqueda de 70N10 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap